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Researcher Information

last modified:2021/04/16

Professor IIYAMA, Koichi

Mail Laboratory Website

Faculty, Affiliation

Faculty of Frontier Engineering,Institute of Science and Engineering  Faculty of Frontier Engineering,Institute of Science and Engineering, Institute of Science and Engineering
Dean of Graduate School of Frontier Science Initiative

College and School Educational Field

Division of Transdisciplinary Sciences,Graduate School of Frontier Science Initiative
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Transdisciplinary Sciences, Graduate School of Frontier Science Initiative
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
School of Frontier Engineering, College of Science and Engineering

Laboratory

Optical and Electronic Sensing Laboratory TEL:076-234-4887

Academic Background

【Academic background(Doctoral/Master's Degree)】
Kanazawa University Master Graduate School, Division of Engineering 198703 Completed
【Academic background(Bachelor's Degree)】
Kanazawa University 198503

Career

Yokogawa Hewlett-Packard Ltd.(1987/04/01-1988/03/31)
Kanazawa University Faculty of Engineering(1988/04/01-2008/03/31)
Kanazawa University Faculty of Electrical and Computer Engineering, Institute of Science and Engineering(2008/04/01-2018/03/31)
Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH (Germany)(2001/06-2002/02)
Institute for Infocomm Research (Singapore) Visiting Professor(2013/08-2013/09)
Kanazawa University Faculty of Frontier Engineering, Institute of Science and Engineering(2018/04/01-)

Year & Month of Birth

1963/03

Academic Society





Award

○Best Poster Award(2013/09)
○Best Paper Award(2014/08)
○Special Award(2016/10/19)

Specialities

Speciality Keywords

Photodetector,Lightwave circuit,Optical fiber,Optical fiber sensor,Optical interferometric sensing,Optical sensing

Research Themes

A Study on Optical Sensing Systems

Optical ranging systems and two-dimensional object profiling utilizing optical interference, and optical reflectmetry for characterizing optical devices such as optical fibers and optical waveguides are studied.

A Study on Photodetectors

High-speed silicon photodiodes/compound semiconductor photodiodes are studied. Photodiodes and opto-electronic integrated circuits utilizing CMOS process are also studied.

A Study on Lightwave Circuits

Optical fibers, optical waveguides, and lightwave circuits such as optical wavelength filters, optical switches and optical interferometers are studied.

Books

Papers

  •  Low-Cost Interrogation of Long-Distance and Multipoint FBG Sensor Using Incoherent-FMCW Optical Ranging System Dwi Hanto,Koichi Iiyama IEEE Sensors Journal 20 7 3599 2020/04/01 
  •  Three-dimensional object profiling using highly accurate FMCW optical ranging system Rini Khamimatul Ula,Yusuke Noguchi,Koichi Iiyama Journal of Lightwave Technolog 37 15 3826 2019/06
  •  High speed measurement for object profiling using FMCW optical sensing system Rini Khamimatul Ula,Yusuke Noguchi,Koichi Iiyama IOP Conf. Series: Journal of Physics: Conference Series 1191 2019/03
  •  Linearly optical frequency chirped DFB laser with pre-distorted modulation waveform for High resolution FMCW ranging system Koichi Iiyama,Misaki Isoda,Atsushi Nakamoto Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR) 2018 2018/08
  •  High speed and high responsivity avalanche photodiode fabricated by standard CMOS process in blue wavelength region Koichi Iiyama,Takeo Maruyama,Ryoichi Gyobu,Takuya Hishiki,Toshiyuki Shimotori IEICE Transactions on Electronics E101-C 7 574 2018/07

show all

  •  A monolithically integrated photoreceiver with avalanche photodiode in CMOS technology Zul Atfyi Fauzan,Mohammed Napiah,Koichi Iiyama ARPN Journal of Engineering and Applied Sciences 13 6 2148 2018/03
  •  Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process Zul Atfyi Fauzan Mohammed Napiah',Takuya Hishiki,Koichi Iiyama Optics and Laser Technology 92 1 193 2017/07
  •  Three-dimensional object profiling by FMCW optical ranging system using a VCSEL Koichi Iiyama,Tatsuya Washizuka,Kohei Yamaguchi 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) 2017
  •  Characterizing silicon avalanche photodiode fabricated by standard 0.18 mu m CMOS process for high-speed operation Zul Atfyi Fauzan Mohammed Napiah,Ryoichi Gyobu,Takuya Hishiki,Takeo Maruyama,Koichi Iiyama IEICE Transactions on Electronics E99C 12 1304 2016/12
  •  Sub-mu m electrode spacing SOI-PIN photodiode fabricated by CMOS compatible process Hiroya Mitsuno,Takeo Maruyama,Koichi Iiyama 2016 21st Optoelectronics and Communications Conference (OECC) Held Jointly with 2016 International Conference on Photonics in Switching (PS) 2016
  •  Linearizing optical frequency sweep of a DFB laser by modulation waveform optimization for high resolution FMCW sensing system Nor Azlinah M.L,Akihiro Igarashi,Nakamoto Atsushi,Takeo Maruyama,Koichi Iiyama International Journal of Electrical and Electronics Engineering Research 5 6 1 2015/12
  •  Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation M. N. Zul Atfyi Fauzan,Koichi Iiyama,Ryoichi Gyobu,Takuya Hishiki,Takeo Maruyama 2015 International Conference on Telematics and Future Generation Networks, TAFGEN 2015 99 2015/10/05
  •  Linearization of nonlinear beat frequency in FMCW interferometry through waveform modifying technique Nor Azlinah Binti,Md Lazam,Koichi Iiyama,Takeo Maruyama,Yosuke Kimura,Nguyen Van Tu ARPN Journal of Engineering and Applied Sciences 10 8 3817 2015/05
  •  Over 10 GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process Gen Li,Takeo Maruyama,Koichi Iiyama Japanese Journal of Applied Physics 54 4S 04DG06-1 2015/03
  •  Pulsed oscillation of organic dye (Coumarin6) VCSEL excited by blue LD Motoharu Tanizawa,Ryohei Takahashi,Takeo Maruyama,Koichi Iiyama 2015 20th Microoptics Conference (MOC) 2015
  •  Reduction of wavelength dependence of coupling characteristics using Si optical waveguide curved directional coupler Hisayasu Morino,Takeo Maruyama,Koichi Iiyama Journal of Lightwave Technology 32 12 2188 2014/06
  •  High speed operation of SOI PIN photodiodes fabricated by CMOS compatible process Takeo Maruyama,Kazuaki Maekita,Gen Li,Koichi Iiyama 2014 Optoelectronics and Communications Conference and Australian Conference on Optical Fibre Technology (OECC/ACOFT 2014) 506 2014
  •  10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 mu m CMOS process Koichi Iiyama,Toshiyuki Shimotori,Ryoichi Gyobu,Takuya Hishiki,Takeo Maruyama 2014 Optoelectronics and Communications Conference and Australian Conference on Optical Fibre Technology (OECC/ACOFT 2014) 243 2014
  •  Low-propagation-loss Ta2O5 optical waveguides on silica substrate Gen Li,Takeo Maruyama,Koichi Iiyama Japanese Journal of Applied Physics 53 4 04EG12-1 2014
  •  GHz response of metamorphic InAlAs metal-semiconductor-metal photodetector on GaAs substrate Kazuaki Maekita,Takeo Maruyama,Koichi Iiyama,Toshi-kazu Suzuki Japanese Journal of Applied Physics 53 2 02BC16-1 2014/02
  •  High-efficiency optical coupling to planar photodiode using metal reflector loaded waveguide grating coupler G. Li,Y. Hashimoto,T. Maruyama,K. Iiyama OPTICAL AND QUANTUM ELECTRONICS 45 7 657 2013/07
  •  Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates Toshi-kazu Suzuki,Hayato Takita,Cong Thanh Nguyen,Koichi Iiyama AIP Advances 2 4 042105-1 2012/12
  •  GHz response of Si photodiodes fabricated with 0.35-μm Si BiCMOS technology Kazuaki Maekita,Toshiyuki Shimotori,Takeo Maruyama,Koichi Iiyama IEEE International Conference on Group IV Photonics GFP 267 2012
  •  Ferroelectric properties of PZT and PLZT films on Si substrate with ITO buffer layer Masaki Matsumoto,Shingo Ebuchi,Takeo Maruyama,Koichi Iiyama IEEE International Conference on Group IV Photonics GFP 237 2012
  •  Propagation of lossy wave in Si slot waveguide Hisayasu Morino,Takeo Maruyama,Koichi Iiyama IEEE International Conference on Group IV Photonics GFP 228 2012
  •  High-efficiency optical coupling to planar photodiode using metal reflector loaded Waveguide grating coupler G. Li,Y. Hashimoto,S. Ebuchi,T. Maruyama,K. Iiyama Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 15 2012
  •  Characterization of APDs fabricated by 0.18 μm CMOS process in blue wavelength region Toshiyuki Shimotori,Kazuaki Maekita,Takeo Maruyama,Koichi Iiyama Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012 509 2012
  •  High-efficiency optical coupling to planar photodiode using metal reflector loaded waveguide grating coupler G. Li,Y. Hashimoto,S. Ebuchi,T. Maruyama,K. Iiyama 2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 15 2012
  •  High-resolution FMCW reflectometry using a single-mode vertical-cavity surface-emitting laser Koichi Iiyama,Shin-ichiro Matsui,Takao Kobayashi,Takeo Maruyama IEEE Photonics Technology Letters 23 11 703 2011/06
  •  Fabrication and characterization of amorphous polyethylene terephthalate optical waveguides Koichi Iiyama,Terumasa Ishida,Yusuke Ono,Takeo Maruyama,Tadaaki Yamagishi IEEE Photonics Technology Letters 23 5 275 2011/03
  •  Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18-mu m CMOS process Koichi Iiyama,Hideki Takamatsu,Takeo Maruyama IEEE Photonics Technology Letters 22 12 932 2010/06
  •  Propagation loss of amorphous silicon optical waveguides at the 0.8 mu m-wavelength range Takahiro Asukai,Makoto Inamoto,Takeo Maruyama,Koichi Iiyama,Keisuke Ohdaira,Hideki Matsumura 2010 7th IEEE International Conference on Group IV Photonics (GFP) 269 2010
  •  Mach-Zehnder interferometric optical switch with MEMS phase shifter Makoto Inamoto,Takeo Maruyama,Koichi Iiyama Optical and Quantum Electronics 41 8 599 2009/06
  •  Silicon lateral avalanche photodiodes fabricated by standard 0.18 mu m CMOS process Koichi Iiyama,Hideki Takamatsu,Takeo Maruyama 2009 35th European Conference on Optical Communication (ECOC) E91-C 11 1820 2009
  •  Mach-Zehnder interferometric optical switch using MEMS phase shifter Makoto Inamoto,Takeo Maruyama,Koichi Iiyama NUSOD 2009: 9th International Conference on Numerical Simulation of Optoelectronic Devices 33 2009
  •  Avalanche amplification in silicon lateral photodiode fabricated by standard 0.18 mu m CMOS Process Koichi Iiyama,Noriaki Sannou,Hideki Takamatsu IEICE Transactions on Electronics E91C 11 1820 2008/11
  •  Fabrication of Si wire optical waveguides by clad formation by selective oxidation of Si Koichi Iiyama,Satoshi Asai,Masahiro Wakashima 12th Optoelectronics and Communications Conference/16th International Conference 2007
  •  n-Channel p-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation Mitoko Tametou,Masahide Takebe,Narayan Chandra Paul,Kouichi Iiyama,Saburo Takamiya Electronics and Communications in Japan (Part II: Electronics) 89 10 18 2006/10 
  •  Extended-range high-resolution FMCW reflectometry by means of electronically frequency-multiplied sampling signal generated from auxiliary interferometer Koichi Iiyama,Makoto Yasuda,Saburo Takamiya IEICE Transactions on Electronics E89C 6 823 2006/06
  •  Effect of oxidation using ultraviolet light and ozone and subsequent nitridation using electron cyclotron resonance plasma on gate portion of GaAs field-effect transistors H Seto,Y Fujino,K Ilyama,S Takamiya,T Hisaka,M Totsuka,Y Aihara Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 45 6A 4915 2006/06
  •  GaAs metal insulator semiconductor field effect transistor with oxi-nitrided gate film formed by new process utilizing Al layer as resist film for selective etching, oxi-nitridation and lift-off Y Fujino,H Seto,M Takebe,M Tametou,NC Paul,K Yama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 45 4A 2417 2006/04
  •  Experimental study of lasing characteristics of Brillouin/erbium optical fiber laser K Iiyama,F Demura,S Takamiya IEICE Transactions on Electronics E88C 6 1304 2005/06
  •  Mechanical stress caused by adsorption of O or N on Ga-terminated (100) GaAs surface and InAl-terminated (100) InAlAs surface: Degradation of insulator/semiconductor interface H Seto,S Miyamura,T Inokuma,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 5A 2905 2005/05
  •  Oxidation of InAlAs and its application to gate insulator of InAlAs/InGaAs metal oxide semiconductor high electron mobility transistor NC Paul,K Nakamura,H Seto,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 3 1174 2005/03
  •  Studies of effects of adsorption of silicon or germanium on the electronic states of (100)GaAs surfaces S Miyamura,H Seto,T Inokuma,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 1A 12 2005/01
  •  Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section TW Jeong,K Iiyama,S Takamiya 2005 International Conference on Indium Phosphide and Related Materials 250 2005
  •  n-channel, p-channel, depletion, enhancement GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surfaces NC Paul,M Takebe,M Tametou,H Seto,Y Fujino,K Iiyama,S Takamiya 2005 International Conference on Indium Phosphide and Related Materials 246 2005
  •  Design of dispersion flattened photonic crystal fiber with a large core and a concentric missing ring K Iiyama,Z Yamashita,S Takamiya Proceedings of WFOPC 2005: 4th IEEE/LEOS Workshop on Fibres and Optical Passive Components 10 2005
  •  Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives Compressive stress but N don't H Seto,S Miyamura,T Inokuma,K Iiyama,S Takamiya 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings 171 2004
  •  Depletion/enhancement mode InAlAs/InGaAs - MOSHEMTs with nm - Thin gate insulating layers formed by oxidation of the InAlAs layer K Nakamura,NC Paul,M Takebe,K Iiyama,S Takamiya 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings 191 2004
  •  Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation M Tametou,M Takebe,K Nakamura,NC Paul,K Iiyama,S Takamiya 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings 187 2004
  •  GaAs-MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces M Takebe,K Nakamura,NC Paul,K Iiyama,S Takamiya IEEE Transactions on Electron Devices 51 3 311 2004/03
  •  Oxygen and sulfur adsorption effects on electronic states of GaAs(100) surfaces studied with discrete variational X alpha method S Miyamura,Y Kasai,Y Yamamura,T Inokuma,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 42 12 7244 2003/12
  •  Equivalent circuit model of InAlAs/InGaAs/InP heterostructure metal-semiconductor-metal photodetectors K Iiyama,J Ashida,A Takemoto,S Takamiya IEICE Transactions on Electronics E86C 11 2278 2003/11
  •  Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs: GaAs-MISFET M. Takebe,N. C. Paul,K. Nakamura,M. Tametou,K. Iiyama,S. Takamiya IEEE International Symposium on Compound Semiconductors, Proceedings 2003- 225 2003
  •  Structural and electrical characterization of oxidated, nitridated and oxi-nitridated (100)GaAs surfaces NC Paul,K Nakamura,M Takebe,A Takemoto,T Inokuma,K Iiyama,S Takamiya,K Higashimine,N Ohtsuka,Y Yonezawa Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42 7A 4264 2003/07
  •  Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & ozone process Y Kita,Y Ohta,NC Paul,K Iiyama,S Takamiya COMPOUND SEMICONDUCTORS 2001 170 139 2002
  •  Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process K Iiyama,Y Kita,Y Ohta,M Nasuno,S Takamiya,K Higashimine,N Ohtsuka IEEE Transactions on Electron Devices 49 11 1856 2002/11
  •  Molecular orbital study of electronic states by discrete variational X alpha method: Influences of chalcogen atoms Y Yamamura,S Miyamura,T Inokuma,K Iiyama,S Takamiya Compound Semiconductors 2001 170 635 2002
  •  Application of brightness of scanning electron microscope images to measuring thickness of nanometer-thin SiO2 layers on Si substrates Y Kita,Y Kasai,S Hashimoto,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 40 10 5861 2001/10
  •  Chromatic dispersion measurements of long optical fibers by means of optical ranging system using a frequency-shifted feedback laser K Iiyama,T Maeda,S Takamiya IEEE Journal of Selected Topics in Quantum Electronics 7 3 484 2001/05
  •  Surface states of (100)n-GaAs with adsorbed oxygens and their dependence on chemical treatment Y Kasai,T Tsuzuku,Y Ohta,T Inokuma,K Iiyama,S Takamiya Proceedings of The 25th International Conference on The Physics Of Semiconductors, Pts I and II 87 327 2001
  •  Study of GaAs(001) surface with adsorbed oxygen Y Kasai,Y Yamamura,T Inokuma,K Iiyama,S Takamiya 2001 International Conference on Indium Phosphide and Related Materials 318 2001
  •  Two levels of Ni/n-GaAs Schottky barrier heights formed on a wafer by controlling pH of pretreatment chemicals: Effect of oxygen adsorption T Tsuzuku,T Sugimura,Y Kasai,T Inokuma,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 39 10 5788 2000/10
  •  Phase-decorrelated FMCW reflectometry for long optical fiber characterization by using a laser diode with modulated external-cavity K Iiyama,T Maeda,S Takamiya IEICE Transactions on Electronics E83C 3 428 2000/03
  •  I-V characteristics of Schottky/metal-insulator-semiconductor diodes with tunnel thin barriers T Sugimura,T Tsuzuku,Y Kasai,K Iiyama,S Takamiya Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 39 7B 4521 2000/07
  •  Phase-decorrelated FMCW reflectometry for long optical fibers by using a laser diode with modulated external-cavity K Iiyama,T Maeda,S Takamiya OFS-13: 13th International Conference on Optical Fiber Sensors & Workshop on Device and System Technology Toward Future Optical Fiber Communication and Sensing 3746 454 1999
  •  Erbium/ytterbium co-doped optical waveguide amplifier in soda-lime glass by silver ion exchange K. Iiyama,K. Hongo,F. Demura,S. Takamiya CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics 4 1087 1999
  •  A preliminary study of MIS diodes with nm-thin GaAs-oxide layers T Sugimura,T Tsuzuku,T Katsui,Y Kasai,T Inokuma,S Hashimoto,K Iiyama,S Takamiya Solid-State Electronics 43 8 1571 1999/08
  •  Linearizing optical frequency sweep of a laser diode by injection current modulation with a rectangular-signal-superimposed triangular signal for FMCW reflectometry K Iiyama,T Okamoto,S Takamiya Electronics and Communications in Japan Part II-Electronics 81 10 30 1998/10
  •  Reverse currents of schottky gates of III-V MESFET/HEMTs: Field emission and tunnel currents S Takamiya,M Harayama,T Sugimura,T Tsuzuku,T Taya,K Iiyama,S Hashimoto Solid-State Electronics 42 3 447 1998/03
  •  Frequency domain detection of coherence multiplexed sensor signals by using an optical loop with a frequency shifter K Iiyama,K Hayashi Journal of Lightwave Technology 15 11 2069 1997/11
  •  Effect of laser phase-induced intensity noise on multiplexed fiber-optic sensor system using optical loop with frequency shifter XQ Zhou,K Iiyama,K Hayashi IEICE Transactions on Electronics E79C 3 437 1996/03
  •  Extended-range FMCW reflectometry using an optical loop with a frequency shifter XQ Zhou,K Iiyama,K Hayashi IEEE Photonics Technology Letters 8 2 248 1996/02
  •  Linearizing optical frequency-sweep of a laser diode for FMCW reflectometry K Iiyama,LT Wang,K Hayashi Journal of Lightwave Technology 14 2 173 1996/02
  •  Extended-range FMCW reflectometry using an optical loop with a frequency shifter XQ Zhou,K Iiyama,K Hayashi 21st European Conference on Optical Communication (ECOC '95) 1-4 769 1995
  •  A study on degradation of spatial resolution in frequency-modulated continuous wave reflectometry due to nonlinear optical frequency sweep LT Wang,K Iiyama,K Hayashi Electronics and Communications in Japan Part II-Electronics 78 10 28 1995/10
  •  A proposal for improving cutoff-frequency center dot breakdown-voltage products of HEMTs H Tsukurimichi,S Hashimoto,K Iiyama,S Takamiya 1998 International Conference on Indium Phosphide and Related Materials 663 1998
  •  Excellent linearly frequency-swept light-source for sensing system utilizing FMCW technique LT Wang,K Iiyama,K Hayashi IEICE Transactions on Electronics E77C 11 1716 1994/11
  •  Detection scheme of coherence-multiplexed sensor signals using an optical loop with a frequency shifter - Sensitivity enhancement XQ Zhou,K Iiyama,K Hayashi IEEE Photonics Technology Letters 6 6 767 1994/06
  •  Loss measurement in optical wave-guide devices by coherent frequency-modulated continuous-wave reflectometry LT Wang,K Iiyama,F Tsukada,N Yoshida,K Hayashi Optics Letters 18 13 1095 1993/07
  •  Numerical-analysis of stability property of an optically injection-locked semiconductor-laser taking account of gain saturation K Iiyama,K Hayashi,Y Ida IEICE Transactions on Electronics E75C 12 1536 1992/12
  •  Simple method for measuring the linewidth enhancement factor of semiconductor-lasers by optical-injection locking K Iiyama,K Hayashi,Y Ida Optics Letters 17 16 1128 1992/08
  •  Detection scheme of coherence multiplexed sensor signals by using optical loop incorporating frequency shifter K Iiyama,M Harano,K Hayashi,Y Ida,T Kadoshima,Y Kurasawa Electronics Letters 28 2 169 1992/01
  •  Reflection-type delayed self-homodyne-heterodyne method for optical linewidth measurements K Iiyama,K Hayashi,Y Ida,H Ikeda,Y Sakai Journal of Lightwave Technology 9 5 635 1991/05
  •  Sensitivity-Enhancing Scheme of a Polarimetric Heterodyne Sensor Using a Birefringent Fiber Loop K Arai,N Honda,T Mori,K Iiyama,K Hayashi,Y Ida Optics Letters 15 19 1103 1990/10
  •  Lineshape and linewidth of optically injection-locked semiconductor laser with a small locking bandwidth Koichi Iiyama,Yoshiyasu Tagawa,Ken-ichi Hayshi,Yoshio Ida Transactions of the IEICE E73 7 1153 1990/07
  •  Delayed self-homodyne method using solitary monomode fibre for laser linewidth measurements Koichi Iiyama,Ken-ichi Hayashi,Yoshio Ida,Seiichiro Tabata,Yoshihisa Sakai Electronics Letters 25 23 1589 1989/12
  •  Mutual optical injection-locking characteristics of semiconductor lasers Koichi Iiyama,Ken-ichi Hayashi,Yoshio Ida,Shigeki Aisawa Transactions of the IEICE E72 2 118 1989/02
  •  New Sensitivity-Enhancing Scheme for a Fibre-Optic Interferometer Utilizing 2 Optical Loops K Arai,K Hayashi,K Iiyama,Y Ida,T Mori Electronics Letters 24 16 1000 1988/08
  •  Measuring method for locking bandwidth of injection-locked semiconductor lasers Ken-ichi Hayashi,Koichi Iiyama,Yoshio Ida,Kazuo Arai Transactions of the IEICE E70 4 306 1987/04

Conference Presentations

  • High-speed three-dimensional object profiling using fmcw optical ranging system by continuous scanning of laser beam(conference:International Symposium on Imaging, Sensing, and Optical Memory 2020 (ISOM’20))(2020/12/02)
  • Frequency-modulated continuous-wave (FMCW) optical sensing system for 3D profiling, LiDAR and fiber-optic sensing system(conference:4th International Symposium on Frontier Applied Physics)(2018/11)
  • Linearly optical frequency chirped DFB laser with pre-distorted modulation waveform for High resolution FMCW ranging system(conference:Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR) 2018)(2018/08)
  • Two-dimensional object profiling by FMCW optical sensing system using one-dimensional photodiode array(conference:International Symposium on Imaging, Sensing, and Optical Memory 2017 (ISOM’17))(2017/10)
  • Three-dimensional Object Profiling by FMCW Optical Ranging System Using a VCSEL(conference:12th Conference on Lasers and Electro-Optics Pacific Rim 2017)(2017/08)

show all

  • Three-dimensional object profiling using FMCW optical sensing system(conference:International Symposium on Optical Memory 2016 (ISOM’16))(2016/10)
  • Wavelength Dependent Photodetection Characteristics of Avalanche Photodiode Fabricated by Standard CMOS Process(conference:2016 International Conference on Solid State Devices and Materials (SSDM 2016))(2016/09)
  • Sub-um electrode spacing SOI-PIN photodiode fabricated by CMOS compatible process(conference:21st Optoelectronics and Communication Conference (OECC 2016))(2016/07)
  • Linearizing optical frequency sweep of a DFB laser by modulation waveform optimization for high resolution FMCW sensing system(conference:International Symposium on Engineering and Applied Science (ISEAS))(2015/09)
  • Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation(conference:1st International Conference on Telematics and Future Generation Networks (TAFGEN 2015))(2015/05)
  • Structure Dependence of over 10 GHz Lateral Si-PIN Photodiode Fabricated by CMOS Compatible Process(conference:2014 International Conference on Solid State Devices and Materials (SSDM 2014))(2014/09)
  • 10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 um CMOS process(conference:19th OptoElectronics and Communications Conference (OECC 2014))(2014/07)
  • Reduction of Wavelength Dependence of Coupling Characteristics using Si/SiO2 Optical Waveguide Bending Directional Coupler(conference:18th OptoElectronics and Communications Conference (OECC 2013))(2013/07)
  • Molecular orbital study of electronic states of InP (100) surfaces by discrete variational Xα method(conference:International Symposium on Compound Semiconductors)(2001/10)
  • Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & ozone(conference:International Symposium on Compound Semiconductors)(2001/10)
  • Surface states of (100) n-GaAs with adsorbed oxygens and their dependence on chemical treatment(conference:25th International Conference on the Physics of Semiconductor)(2000/09)
  • Erbium/Ytterbium co-doped optical waveguide amplifier in soda-lime glass by silver ion exchange(conference:The Pacific Rim Conference on Lasers and Electro-Optics)(1999/09)
  • I-V characteristics of Schottky/MIS diodes with tunnel thin barriers(conference:International Symposium on Surface Science for Micro- and Nano-Deice Fabrication)(1999/11)
  • Phase-decorrelated FMCW reflectometry for long optical fibers by using a laser diode with modulated external cavity(conference:13th International Conference on Optical Fiber Sensors)(1999/04)
  • A novel method for measuring chromatic dispersion of long optical fibers by means of high resolution optical ranging system using a frequency-shifted feedback laser(conference:Symposium on Optical Fiber Measurements)(2000/09)
  • A preliminary study of MIS diodes with nm-thin GaAs-oxide layers(conference:Topical Workshop on Heterostructure Microelectronics for Information Systems and Applications)(1998/08)
  • A proposal for improving cutoff-frequency・breakdown-voltage products of HEMTs(conference:10th International Conference on Indium Phosphide and Related Materials)(1998/05)
  • Enhancement and accumulation mode operation of GaAs MISFETs and InAlAs/InGaAs MISHEMTs with nm-thin gate oxide layers(conference:2002 International Conference on Solid-State Devices and Materials)(2002/09)
  • Mid-range frequency-modulated continuous-wave reflectometry using a narrow-linewidth laser diode with linearized optical frequency sweep(conference:The Pacific Rim Conference on Lasers and Electro-Optics)(1997/07)
  • Experimental study on InGaAs metal-semiconductor-metal photodetectors for long wavelength(conference:Topical Workshop on Heterostructure Microelectronics)(2003/01)
  • Oxygen and sulfur adsorption effects upon electronic states of GaAs (100) surfaces studied with Discrete Variational Xa method(conference:Topical Workshop on Heterostructure Microelectronics)(2003/01)
  • Study of GaAs (100) surface with adsorbed oxygen(conference:International Conference on Indium Phosphide and Related Materials)(2001/05)
  • Metal induced gap state of Al/(100) InP systems studied with molecular orbital calculations(conference:Topical Workshop on Heterostructure Microelectronics)(2003/01)
  • Effect of oxidation and/or nitridation of (100) n-GaAs surface(conference:2002 Asia-Pacific Workshop on Foundamentals and Applications of Advanced Semicon)(2002/07)
  • Two-levels of Ni/n-GaAs Schottky barriers formed on a wafer by controlling pH of pretreatment chemicals(conference:International Workshop on Surfaces and Interfaces of Mesoscopic Devices)(1999/12)
  • Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment(conference:14th Indium Phosphide and Related Materials Conference)(2002/05)
  • Highly accurate measurements of absolute distance over 100 m-range using a frequency-shifted feedback laser diode(conference:Conference on Lasers and Electro-Optics (CLEO 2002))(2002/05)
  • Ta2O5 optical waveguide on silica substrate fabricated by CF4 reactive ion etching(conference:2013 International Conference on Solid State Devices and Materials (SSDM 2013))(2013/09)
  • Optimizing interdigital electrode spacing of CMOS APD for 10 Gb/s application(conference:18th OptoElectronics and Communications Conference (OECC 2013))(2013/07)
  • GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding(conference:18th OptoElectronics and Communications Conference (OECC 2013))(2013/07)
  • Fabrication and Characterization of Amorphous Polyethylene Terephthalate Optical Waveguide(conference:The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013))(2013/06)
  • Metamorphic InAlAs MSM Photodetector on GaAs Substrate(conference:The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013))(2013/06)
  • High-speed Si CMOS APD by standard CMOS process(conference:2nd International Symposium on Photonics and Electronics Convergence (ISPEC 2012))(2012/12)
  • PZT Optical Waveguide on Silicon Substrate(conference:2012 International Conference on Solid State Devices and Materials (SSDM 2012))(2012/09)
  • Propagation of Lossy Wave in Si Slot Waveguide(conference:9th International Conference on Group IV photonics)(2012/08)
  • High-efficiency optical coupling to planar photodiode using metal reflector loaded waveguide grating coupler(conference:12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2012))(2012/08)
  • GHz response of Si photodiodes fabricated with 0.35-µm Si BiCMOS technology(conference:9th International Conference on Group IV photonics)(2012/08)
  • Characterization of APDs fabricated by 0.18 m CMOS process in blue wavelength region(conference:17th Opto-Electronics and Communications Conference (OECC 2012))(2012/07)
  • Ferroelectric properties of PZT film on Si substrate with ITO buffer layer(conference:2012 Material Research Society Spring Meeting)(2012/04)
  • GHz Response of Polycrystalline Silicon Photodiode Fabricated by Standard CMOS Process(conference:1st International Symposium on Photonics and Electronics Convergence (ISPEC 2011))(2011/11)
  • Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N dont(conference:2004 International Conference on Indium Phosphide and Related Materials)(2004/06)
  • Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer(conference:2004 International Conference on Indium Phosphide and Related Materials)(2004/06)
  • Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section(conference:2005 International Conference on Indium Phosphide and Related Materials)(2005/05)
  • Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation(conference:2004 International Conference on Indium Phosphide and Related Materials)(2004/06)
  • Extended-range high-resolution FMCW sensing system by means of frequency-multiplied reference beat signal(conference:16th International Conference on Optical Fiber Sensors)(2003/10)
  • GaAs-MISFET with nm-thin gate insulating films formed by oxi-nitridation process(conference:2003 International Conference on Solid State Devices and Materials)(2003/09)
  • Improved performance of nm-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs: GaAs-MISFET(conference:2003 International Symposium on Compound Semiconductors)(2003/08)
  • One-dimensional equivalent circuit model of heterojunction metal-semiconductor-metal photodetector(conference:Topical Workshop on Heterostructure Microelectronics)(2003/01)
  • Amorphous Polyethylene Terephthalate Optical Channel Waveguide(conference:2009 International Conference on Solid State Devices and Materials)(2009/10)
  • Mach-Zehnder interferometric optical switch using MEMS phase shifter(conference:9th International Conference on Numerical Simulation of Optoelectronic Devices)(2009/09)
  • Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 um CMOS Process(conference:35th European Conference on Optical Communication)(2009/09)
  • Fabrication of heavily boron-doped diamond films by microwave plasma chemical vapor deposition with bias-enhanced nucleation and their superconducting properties(conference:International Symposium on Superconductivity)(2008/10)
  • Superconducting properties of heavily boron-doped diamond films fabricated by microwave plasma chemical vapor deposition with bias-enhanced nucleation(conference:International Workshop on Superconductivity in Diamond and Related Materials)(2008/07)
  • Design of dispersion flattened photonic crystal fiber with a large core and a concentric missing ring(conference:4th Workshop on Fibers and Optical Passive Components)(2005/06)
  • N-channel, p-channel, enhancement, depletion GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surface(conference:2005 International Conference on Indium Phosphide and Related Materials)(2005/05)
  • Linearization of nonlinear beat frequency in FMCW interferometry through waveform modifying technique(conference:2014 2nd International Conference on Electronic Design (ICED 2014))(2014/08)
  • High speed operation of SOI pin photodiodes fabricate by CMOS compatible process(conference:19th OptoElectronics and Communications Conference (OECC 2014))(2014/07)
  • Reduction of wavelength dependence of coupling characteristics using Si/SiO2 optical waveguide curved directional coupler(conference:3rd International Symposium on Photonics and Electronics Convergence (ISPEC 2013))(2013/11)
  • Active Layer Thickness Dependence of the Bandwidth of Amorphous Silicon Photoconductors(conference:2011 International Conference on Solid State Devices and Materials (SSDM 2011))(2011/09)
  • Frequency Response of Amorphous Silicon Photoconductors(conference:16th Opto-Electronics and Communications Conference)(2011/07)
  • Propagation loss of amorphous silicon optical waveguides at the 0.8m-wavelength range(conference:7th International Conference on Group IV Photonics)(2010/09)
  • Analysis of SOI-Based Optical Waveguide Switch with MEMS Evanescent Coupler(conference:7th International Conference on Optics-photonics Design & Fabrication (ODF’10))(2010/04)
  • Silicon lateral avalanche photodiodes fabricated by standard 0.18 m complementary metal-oxide-semiconductor process(conference:2009 International Conference on Solid State Devices and Materials (SSDM 2009))(2009/10)
  • Ferroelectric Properties of PZT and PLZT Films on Si Substrate with ITO Buffer Layer(conference:9th International Conference on Group IV photonics)(2012/08)
  • Low loss amorphous polyethylene terephthalate (PET) optical waveguides(conference:16th Opto-Electronics and Communications Conference)(2011/07)
  • Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 um Complementary Metal-Oxide-Semiconductor Process(conference:2009 International Conference on Solid State Devices and Materials)(2009/10)
  • Development of high-resolution and highly accurate FMCW optical ranging system and its application(2017/06/02)

Others

Arts and Fieldwork

Patent

Theme to the desired joint research

○A study on optical interference and optical fiber sensing systems
○A study on high-speed photodetectors

Grant-in-Aid for Scientific Research

○2022「FMCW法を用いた長距離・高分解能・クロストークフリーのLiDARの開発」(2020-2022) 
○「レーザ光の光周波数掃引による高精度かつ高速な三次元形状計測システムの開発」(2017-2019) 
○「レーザ光の光周波数掃引法による高精度で非接触な物体形状計測システムの開発」(2012-2014)
○「レーザ光の光周波数掃引法による高精度で非接触な物体形状計測システムの開発」(2012-2014) 
○「光周波数掃引法による光回路素子の非破壊的内部診断・特性評価システムの構築」(1996-1997) 
○「シリコンの選択酸化による細線光導波路の作製に関する研究」(2005-2006) 

Competitive research funding,Contribution

Collaborative research,Consignment study

○Development of high-resolution optical ranging system by using a frequency-swrpt laser(2009-2009)
○Hokuriku Lifecare Cluster(2008-2012)

Classes (Bachelors)

○Electronic Circuit Analysis II and Exercise(2018)
○Electrical and Electronic Engineering Laboratory I(2018)
○Electrical and Electronic Engineering Laboratory II(2018)
○Transmission Circuits(2018)
○Electronic Circuit Analysis I and Exercise(2018)
○Electrical and Electronic Engineering Laboratory II(2017)
○Electrical and Electronic Engineering Laboratory I(2017)
○Transmission Circuits(2017)
○Electronic Circuit Analysis I and Exercise(2017)
○Research Project(2016)
○Research Project(2016)
○Electronic Circuit Analysis I and Exercise(2016)
○Electronic Circuit Analysis II and Exercise(2016)
○Electrical and Electronic Engineering Laboratory II(2016)
○Transmission Circuits(2016)
○Research Project(2016)
○Electrical and Electronic Engineering Laboratory I(2016)

Classes (Graduate Schools)

○Optical Sensing(2018)
○Creative Research 1(2018)
○Lightwave Engineering A(2018)
○Introduction to Practical Data Analysis and Statistics(2018)
○Transdisciplinary Session I(2018)
○Creative Research 2(2018)
○Internship(KU)(2018)
○Lightwave Engineering(2018)
○Optical Sensing(2017)
○Optical Sensing(2017)
○Optical Sensing(2017)
○Optical Sensing(2017)
○Lightwave Engineering A(2017)
○Creative Research 2(2017)
○Creative Research 1(2017)
○Introduction to Electrical Engineering and Computer Science(2016)
○Lightwave Engineering A(2016)
○Creative Research 2(2016)
○Creative Research 1(2016)
○Optical Sensing(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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