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Researcher Information

last modified:2017/09/05

Professor SASAKI Kimihiro

Mail

Faculty, Affiliation

Faculty of Electrical and Computer Engineering, Institute of Science and Engineering Electric Circuits and Devices

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology

Laboratory

Electron Devices FAX:076-234-4870

Academic Background

【Academic background(Doctoral/Master's Degree)】
Miyazaki University Master 198303 Completed
【Degree】
Doctor

Career

Kanazawa University(1995/12/01-)
Tokyo Institute of Technology Interdisiciplinary Graduate School(1983/05/01-1993/07/31)
Chengdu Technological University School of Electronic Engineering Visiting Professor(2017/05-)

Year & Month of Birth

1958/11

Academic Society




The Thermoelectric Society of Japan

Award

Specialities

Electron device/Electronic equipment、Thin film/Surface and interfacial physical properties、

Speciality Keywords

Electron Devices and Materials

Research Themes

Physics of Electron Devices and Its Fabrication Technology

Thermoelectric materials and devices

Sputtering process

Books

Papers

  •  Fundamental Properties of ECR Plasma CVD and Hydrogen Induced Low Temperature Si Epitaxy THIN SOLID FILMS 395/1-2 225-229 2001
  •  Epitaxial Growth of SiGe Thin Films by Ion Beam Sputtering APPLIED SURFACE SCIENCE 113/114 43-47 1997
  •  Epitaxial Growth Properties of Si and SiGe Films Prepared by Ion Beam Sputtering Process VACUUM 59 2-3 397-402 2000
  •  Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD VACUUM 51 4 537-541 1998
  •  Etching Effect by Hydrogen Plasma in ECR-CVD and Its Application to Low Temperature Si Selective Epitaxial Growth Japanese Journal of Applied Physics 37 2 402-407 1998/02

show all

  •  Growth Dependence of Reactive Sputtered Yttria-Stabilixed Zirconia on Si(100), (110),(111) Substrates Japanese Journal of Applied Physics 38 Part2/1A B L74-L77 1999/01
  •  Heteroepitaxial growth of SiGe films and heavy B doping by ion-beam sputtering THIN SOLID FILMS 369 1-2 171-174 2000
  •  Heteroepitaxial growth of YSZ films on Si(100) substrate by using new metallic mode of reactive sputtering VACUUM 51 4 583-590 1998
  •  High-rate reactive deposition of indium oxide films on unheated substrate using ozone gas THIN SOLID FILMS 352 133-137 1999
  •  Investigation of Ion Beam sputtering Process by Monte Carlo Simulation Electronics and Communications in Japan,Part2 81 12 41-47 1998
  •  J.D.Kim, S.Kawagoe, K.Sasaki and T.Hata Japanese Journal of Applied Physics 38 12A 6882-6886 1999/12
  •  Metallic Mode Growth of ZrO2-Based Thin Films for Gate Insulator Using Reactive Sputtering Technique 電子情報通信学会技術研究報告 ED2001-67, SDM-74 93-97 2001
  •  Origin of oxygen in Pb(Zr,Ti)O3 films prepared by metal-oxide combined target VACUUM 51 4 661-664 1998
  •  Preparetion of perovskite Pb(Zr,Ti)O3 thin films on YSZ(111)/Si(111) substrates by post-deposition annealing THIN SOLID FILMS 385 293-297 2001
  •  Properties of PZT Thin Films Prepared at Various Targets with Metallic Mode Reactive Sputtering 電子情報通信学会技術研究報告 ED-124 73 78 1999
  •  roposal of new mixture target for PZT thin films by reactive sputtering VACUUM 51 4 665-671 1998
  •  Silicon Selective Growth on Partially Oxidized Substrate by ECR Plasma CVD Technique VACUUM 59 2-3 672-677 2000
  •  Yttria-Stabilized Zirconia (YSZ) heteroepitaxially grown on Si substrates by reactive sputtering VACUUM 59 2-3 381-389 2000
  •  Si Bipolar Transistors with Low Temperature Plasma Deposited Emitters Proc.7th Intern. Symp. on IC Technology, System & Applications 10-13 1997/09
  •  Deposition of Epitaxial Yittria-Stabilized Zirconia (YSZ) on Si(100) and Simultaneous Growth of Amorphous SiO2 Interlayer Extended Abstracts of Solid State Devices and Materials 40-41 1997/08
  •  Epitaxial Growth Properties of SiGe Films Prepared by Ion Beam Sputtering Process Proc. of 5th International Symposium of Sputtering and Plasma Processes 5-6 1999
  •  Etching Process in Low TemperatureEpitaxial Growth of Silicon by ECR Plasma CVD Proc. of International Symposium of Sputtering and Plasma Processes '97 1997/06
  •  Fabrication of Silicon/Germanium Superlattice by Ion Beam Sputtering Proc. of 6th International Symposium of Sputtering and Plasma Processes 146-149 2001/06
  •  Heteroepitaxial Growth of SiGe Films and Heavily B Doping by Ion Beam Sputtering Program & Abstracts, International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si) PII-6 1999
  •  Heteroepitaxial Growth of YSZ Films on Si(100) Substrate by New Reactive Sputtering 135-144 1997/06
  •  Hydrogen Induced Silicon Epitaxy Using ECR Plasma CVD Technique Extended Abstracts of the 1st Internationa Conference on Cat-CVD(Hot-Wire CVD) Process 193-196 2000/11
  •  Initial Growth Property of Ge on Si(100) Substrate by Ion-Beam Sputtering Program and Abstracts of 1st International Workshop on New Group IV(Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opt-electronic Devices VI-12 2001/01
  •  Limited Reaction Growth of YSZ (ZrO2:Y2O3) Thin Films for Gate Insulator Proc. of 6th International Symposium of Sputtering and Plasma Processes 41-44 2001/06
  •  Mechanisms of heteroepitaxial grown Yttria Stabilized Zirconia (YSZ) on Si substrates by reactive sputtering Proc. of 5th International Symposium of Sputtering and Plasma Processes 1-2 1999/06
  •  Metallic Mode Growth of ZrO2-Based Thin Films for Gate Insulator Using Reactive Sputtering Technique 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices 93-97 2001/07
  •  Origin of Oxigen in PZT Films Prepared by Metal-Oxide Combined Target Proc. of International Symposium of Sputtering and Plasma Processes '97 607-612 1997/06
  •  Preparation and Properties of Pb(Zr,Ti)O3 Thin Films Deposited on Ir Electrode Using a Sputtering Apparatus Proc. of 5th International Symposium of Sputtering and Plasma Processes 239-240 1999
  •  Preparation and Properties of Perovskite Pb(Zr, Ti)O3 Thin Films on YSZ(111)/Si(111) Substrates by Post-deposition Annealing 第17回強誘電体応用会議予稿 45-46 2000/06
  •  Preparation of SiGe Epitaxial Films by Ion Beam Sputtering of Multi-Target Proc. of International Symposium of Sputtering and Plasma Processes '97 483-488 1997/06
  •  Properties of PZT Thin Films Prepared at Various Targets with Metallic Mode Reactive Sputtering Proc. 1999 Int.Workshop on ADVANCED LSI's AND DEVICES 252-257 1999
  •  Propose of New Mixture Target for Low Temperature and High Rate Deposition of PZT Thin Films by Reactive Sputtering Extended Abstracts of Solid State Devices and Materials 36-37 1997/08
  •  Propose of New Target for PZT Thin Films by Reactive Sputtering Proc. of International Symposium of Sputtering and Plasma Processes '97 617-622 1997/06
  •  Prparation of SiGe Epitaxial Films and Heavily Boron Doping by Ion Beam Sputterirng Proc. of 2nd Magnetro-Electronics International Symposium 117 120 1999
  •  Reactive Growth of YSZ (ZrO2:Y2O3) Thin Films with Unpoisoned Sputtering Target Abs. of Joint Workshop of 29th IUVSAT International Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology and 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integr 59-62 2000/11
  •  Silicon Epitaxial Growth by ECR Plasma Assisted RF Sputtering Proc. of 6th International Symposium of Sputtering and Plasma Processes 265-268 2001/06
  •  Silicon selective Epitaxial Growth on Partially Oxidized Substrate by ECR Plasma CVD Technique Proc. of 5th International Symposium of Sputtering and Plasma Processes 99-100 1999
  •  Surface and Interface of Heteroepitally Grown Yttoria-Stabilized Zircona (YSZ) on (100), (110), (111) Si Substrates by Reactive Sputtering Program & Abstracts, International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si) PI-29 1999
  •  Crystalline and Thermoelectrical Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates Akinari Matoba Kimihiro Sasaki and Minoru Kumeda Jap. J. App. Phys. 48 2009
  •  Improved dielectric properties of tetragonal ZrO2 gate dielectric fabricated by ozone-assisted sputtering Y.Zhou N.Inosaka K.Sasaki M.Kumeda 48 2009

Conference Presentations

Arts and Fieldwork

Patent

Theme to the desired joint research

Grant-in-Aid for Scientific Research

○「新しいスパッタ堆積モードによる強誘電体(PZT)薄膜の低温形成とその機構解明」(1997-) 
○「制限反応スパッタ製膜法による高誘電率YSZ絶縁膜の研究」(2001-) 
○「超高濃度ホウ素ドープSiGeによる巨大熱起電力の発現とその応用」(2003-) 
○「結晶/非晶質混合相シリコン系材料による巨大熱電源象の実証とその応用」(2006-) 

Classes (Bachelors)

Classes (Graduate Schools)

○Advanced Electronic Devices(2017)
○Solid-State Device Theory(2017)
○Solid-State Device Theory(2017)
○Solid-State Device Theory(2017)
○Solid-State Device Theory(2017)
○Advanced Electronic Devices(2016)
○Solid-State Device Theory(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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