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Researcher Information

last modified:2024/03/22

Vice President MORIMOTO Akiharu

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Faculty, Affiliation

Administration Office University Headquarter Office

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Course in Electrical and Electronic Engineering, School of Electrical, Information and Communication Engineering, College of Science and Engineering

Laboratory

Laboratory of Electronic Materials TEL: FAX:

Academic Background

【Academic background(Doctoral/Master's Degree)】
Tokyo Institute of Technology Master Graduate School, Division of Science and Engineering 198103 Completed
【Academic background(Bachelor's Degree)】
Kanazawa University Department of Electronics 197903
【Degree】
Dr. of Engineering

Career

Kanazawa University Faculty of Engineering Research Assistant(1981/04/01-1988/03/31)
Kanazawa University Faculty of Engineering. Assistant Professor(1988/04/01-1990/03/31)
Kanazawa University Faculty of Engineering Associate Professor(1990/04/01-2002/03/31)
Kanazawa University Faculty of Engineering Professor(2002/04/01-2008/03/31)
Kanazawa University Professor(2008/04/01-)
Kanazawa University Director of Information Media Center(2014/04/01-2018/03/31)
Kanazawa University Dean of College of Science and Engineering(2018/04/01-2020/03/31)

Year & Month of Birth

1956/10

Academic Society

The Society of Applied Physics
JSPS 131 Thin Film Committee
The Society of Applied Physics
The Society of Applied Physics
The Society of Applied Physics
The Society of Applied Physics

Award

The Society of Applied Physics
○8th (2014FY) JSAP Fellow(2014/09/17)
○8th (2014FY) JSAP Fellow(2014/09/17)
○8th (2014FY) JSAP Fellow(2014/09/17)
○8th (2014FY) JSAP Fellow(2014/09/17)

Specialities

、Thin film/Surface and interfacial physical properties、Electronic materials/Electric materials

Speciality Keywords

Pulsed laser ablation, PLA, Pulsed Laser Deposition, PLD, Oxide electronics, Ferroelectric thin films, Non-volatile memory, Fe-ReRAM, Polarization-induced photovoltaic effect

Research Themes

Preparation of Ferroelectric Films by Pulsed Laser Ablation for NVRAM

Preparation of Ferroelectric Films by Pulsed Laser Ablation for NVRAM For establishing the oxide electronics my interest is on the thin film fabrication by pulsed laser ablation (PLA) technique. The PLA is carried out by focusing the pulsed laser beam onto the target. Target materials melted and ejected by high power density laser are transferred to the substrates, resulting in designed crystalline films. Materials for nonvolatile memory, which does not lose the memory without an electricity supply, are grown and characterized.

Non-Volatile Fe-ReRAM Using Ferroelectric Thin Films

Novel Solar Cells Using Ferroelectric Polarization of Perovskite Thin Films

Preparation and Characterization of Iron Oxide Thin Films

Preparation of Er-dpoed Ferroelectric Thin Films by Pulsed Laser Ablation and Field Modulation Effect of Photoluminescence

Nonvolatile Memory using Al-rich Alumina

Books

  •  Handbook of Thin Film Process Technology Institute of Physics Publishing (Bristol and Philadelphia) 1995/09

Papers

  •  Effect of Nitrogen Gas on Preparation of Ti-Al-N Thin Films by Pulsed Laser Ablation APPLIED SURFACE SCIENCE 127-129 994 1998/05
  •  Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs Structure for Optoelectronic Device Applications J. Crystal Growth 190 227 1998/06
  •  Influence of Pb incorporation on light-Induced phenomena in amorphous Ge100-x-yPbxSy thin films J. Non-Crystal. Sol. 217/2 3 121 1997/09
  •  Low-temperature Growth of YBCO Thin Films by Pulsed Laser Ablation in Reductive Environment APPLIED SURFACE SCIENCE 127-129 963 1998/05
  •  Nitrogen- and Ammonia-Plasma Nitridation of Hydrogenated Amorphous Silicon APPLIED SURFACE SCIENCE 113/114 610 1997/04

show all

  •  Photoluminescence Enhanced by Excimer Laser Irradiation in Silicon Oxide Films Prepared by Pulsed Laser Ablation J. Non-Crystal. Sol. 227-230 493 1998/05
  •  Size Distribution of Droplets in Film Prepared by Pulsed Laser Ablation APPLIED SURFACE SCIENCE 127-129 639 1998/05
  •  Removal of Surface Oxides on Copper by Pulsed Laser Irradiation Jpn. J. Appl. Phys. 37 8 4505 1998/08
  •  LPE-Like Crystal Growth of YIG Ferrimagnetic Thin Films by Pulsed Laser Ablation with Molten Droplets Appl. Phys. A 69 7 S703 1999/12
  •  Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation using Molten Droplets Jpn. J. Appl. Phys. 39 4A L278 2000/03
  •  Effect of hot filament on preparation of YBCO superconducting films by pulsed laser ablation in nitrous oxide gas THIN SOLID FILMS 395/1 2 51 2001/09
  •  Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate Jpn. J. Appl. Phys. 41 2B L206 2002/02
  •  Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films Jpn. J. Appl. Phys. 41 2A 775 2002/02
  •  Preparation of Twin- and Crack-Free LiNbO3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature Jpn. J. Appl. Phys. 41 3B L 2002/03
  •  Thin Film Patterning by Laser Lift-Off X. Chen, A. Morimoto, M. Kumeda, T.Shimizu JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 41 5A 3099-3100 2002/05
  •  Temperature simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy S. Ohtsubo, S. Yamada, Y. Yonezawa, A. Morimoto, T. Shimizu JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 41 6A 3880-3884 2002/06
  •  Oxidation process in pulsed laser ablation of Si with various ambients A. Masuda, S. Usui, Y. Yamanaka, Y. Yonezawa, T. Minamikawa, M. Suzuki, A. Morimoto a, ,M. Kumeda, T. Shimizu THIN SOLID FILMS 416 1 106-113 2002/09
  •  Light-intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films M. Kumeda, M. Shimada, S. Kimura, A. Morimoto, T. Shimizu 42 3A 25-256 2003/03
  •  Platinum film patterning by laser lift-off using hydrocarbon film on insulating substrates A. Morimoto, H. Tanimura, H. Yang, S. Ohtsubo, M. Kumeda, X. Chen APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 79 4 1015-1018 2004/09
  •  Stark splitting in photoluminescence spectra of Er in a-Si:H M. Kumeda, M. Takahashi, A. Morimoto, T. Shimizu 862 0 501-506 2005/01
  •  Light-intensity dependence of the staebler-wronski effect in a-Si:H with various densities of defects M. Kumeda, R. Sakai, A. Morimoto, T. Shimizu 862 0 463-468 2005/01
  •  Structural properties of silicon thin films prepared by hot-wire-assisted electron cyclotron resonance chemical vapor deposition Y. Li, M. Kumeda, A. Morimoto, T. Kawae, G. Chen, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 2 751-755 2007/02
  •  Environment of Er doped in a-Si:H and its relation with photoluminescence spectra M. Kumeda, Y. Sekizawa, A. Morimoto, T. Shimizu Materials Research Society Symposium Proceedings 910 1 131-136 2007/10
  •  Fabrication of BiFeO3 Thick Films by a Simple Liquid-Phase Epitaxial Growth Technique T. Kawae, H. Tsuda, M. Shiomoto, S. Yamada, M. Nagao, A. Morimoto, M. Kumeda 47 1 237-239 2008/01
  •  Reduced Leakage Current and Ferroelectric Properties in Nd and Mn Codoped BiFeO3 Thin Films K. Kawae, H. Tsuda, A. Morimoto Appl. Phys. Express 1 51601  1-3 2008/04
  •  Etching rate, optical transmittance and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by RF magnetron co-sputtering S. Nakata, S. Nagai, M. Kumeda, T. Kawae, A. Morimoto, T. Shimizu JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26 4  1373 2008/07
  •  Effect of Microstructure and Crystalline Orientation of Pt Single- or Pt/Ru Bilayer-Electrodes on the Work Function and Leakage Current of SrTiO3 Capacitors T.-Y. Kim, T. Kawae, N. Ikegami, S. Yamada, Y. Yonezawa, K. Takahashi, A. Morimoto, M. Kumeda JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47 8  6374-6379 2008/08
  •  Composition Dependence in BiFeO3 Film Capacitor with Suppressed Leakage Current by Nd and Mn Cosubstitution and Their Ferroelectric Properties T. Kawae, H. Tsuda, H. Naganuma, S. Yamada, M. Kumeda, S. Okamura, A. Morimoto JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47 9  7586-7589 2008/09
  •  Fatigue-resistant epitaxial Pb(Zr,Ti)O3 capacitors on Pt electrode with ultra-thin SrTiO3 template layers S. Takahara, A. Morimoto, T. Kawae, M. Kumeda, S. Yamada, S. Ohtsubo, Y. Yonezawa THIN SOLID FILMS 516 23  8393-8393 2008/10
  •  Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films T. Kawae, Y. Terauchi, H. Tsuda, M. Kumeda, A. Morimoto APPLIED PHYSICS LETTERS 94 11  112904 2009/02
  •  Hysteresis Behavior of Capacitance–Voltage Curve in (Ba0.6Sr0.4)TiO3 Thick Films Caused by Strained Heterostructure T. Kawae, Y. Fukuda, K. Morito, K. Munetomo, A. Morimoto JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 48 9  09KA12 2009/09
  •  Optical Properties of BiFeO3-System Multiferroic Thin Films H. Shima, T. Kawae, A. Morimoto, M. Matsuda, M. Suzuki, T. Tadokoro, H. Naganuma, T. Iijima, T. Nakajima, S. Okamura JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 48 9  09KB01 2009/09
  •  Thickness dependence of the structural and dielectric properties of epitaxial ZrO2 films grown by limited reaction sputtering Y. Zhou, K. Sasaki, T. Kawae and A. Morimoto JOURNAL OF PHYSICS D-APPLIED PHYSICS 42 20 205406 2009/10
  •  Influences of Pr and Mn co-substitution on crystallinity and electric properties of BiFeO3 thin films T. Kawae, Y. Terauchi, T. Nakajima, S. Okamura, A. Morimoto 118 1380 652-655 2010/08
  •  Structure and Electrical Properties of (Pr, Mn)-Codoped BiFeO3/B-Doped Diamond Layered Structure T. Kawae, Y. Hori, T. Nakajima, H. Kawasaki, N. Tokuda, S. Okamura, Y. Takano and A. Morimoto ELECTROCHEMICAL AND SOLID STATE LETTERS 14 6 G31 2011/03
  •  Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition  Z. P. Wang, A. Morimoto, T. Kawae, H. Ito and K. Masugata PHYSICS LETTERS A 375 33 3007 2011/08
  •  Influence of SrRuO3 bottom electrode thickness on electric properties of (Bi,Pr)(Fe,Mn)O3 Ultra-thin film capacitor T. Kawae, T. Tsukada, Y. Terauchi, T. Nakajima, Y. Nomura, S. Okamura and A. Morimoto Jpn. J. Appl. Phys. 50 9  09NA09 2011/09
  •  Hysteresis loops of polarization and magnetization in (BiNd 0.05)(Fe0.97Mn0.03)O3/Pt/CoFe 2O4 layered epitaxial thin film grown by pulsed laser deposition T. Kawae, J. Hu, H. Naganuma, T. Nakajima, Y. Terauchi, S. Okamura and A. Morimoto THIN SOLID FILMS 519 22 7727 2011/09
  •  Charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films fabricated by radio-frequency magnetron co-sputtering  S. Nakata, R. Maeda, T. Kawae, A. Morimoto and T. Shimizu THIN SOLID FILMS 520 3 1091 2011/11
  •  Fabrication of (Bi,Pr)(Fe,Mn)O3 thin films on poly-crystalline diamond substrate by chemical solution deposition and their properties T. Kawae, H. Kawasaki, T. Nakajima, N. Tokuda, S. Okamura, A. Morimoto and Y. Takano Jpn. J. Appl. Phys. 51 9 09LA08 2012/09
  •  Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO3 Ferroelectric Thin Films Y. Ukai, S. Yamazaki, T. Kawae and A. Morimoto Jpn. J. Appl. Phys. 51 9 09LE10 2012/09
  •  Fabrication and Characterization of Metal–Ferroelectric–Insulator–Semiconductor Capacitor Structure with Ferroelectric (Bi,Pr)(Fe,Mn)O3 Thin Films T. Kawae Y. Seto A. Morimoto Jpn. J. Appl. Phys. 52 2 04CH03 2013/02
  •  Improvement of charge trapping characteristics of Al2O 3/Al-rich Al2O3/SiO2 stacked films by thermal annealing  S. Nakata, T. Kato, S. Ozaki, T. Kawae, A. Morimoto Thin Solid Films 542 242 2013/09
  •  Fabrication and Characterization of Metal–Ferroelectric–Insulator–Semiconductor Capacitor Structure with Ferroelectric (Bi,Pr)(Fe,Mn)O3 Thin Films  T. Kawae, Y. Seto, A. Morimoto Jpn. J. Appl. Phys. 52 04CH03 2013/04
  •  Influences of low-temperature postdeposition annealing on memory properties of Al/Al2O3/Al-rich Al-O/SiO2/p-Si charge trapping flash memory structures  S. Ozaki, T. Kato, T. Kawae, A. Morimoto J.of Vac. Sci. and Technol. B:  32 3 31213 2014/05
  •  Retention properties with high-temperature resistance in (Bi,Pr)(Fe,Mn)O3 thin film capacitor Y. Nomura, K.Nomura, K. Kinoshita, T. Kawae, A. Morimoto Phys. Status Solidi RRL 8 536 2014/06
  •  Temperature dependence of ferroelectric properties and the activation energy of polarization reversal in (Pr,Mn)-codoped BiFeO3 thin films  Y. Nomura, T.Tachi, T. Kawae, A. Morimoto Phys. Status Solidi B 252 4 833 2015/01

Conference Presentations

Others

Arts and Fieldwork

Patent

Theme to the desired joint research

○Preparation of functional oxide thin films by plused laser ablation and the application

Grant-in-Aid for Scientific Research

○「レ-ザアブレ-ションにおける薄膜堆積機構解明」(1996-1996) 
○「レーザドロプレットエピタクシ法による高品質電子材料薄膜の作製」(1998-1999) 
○「電子ビーム誘起効果を用いた選択成長によるナノファブリケーション」(2003-2004) 
○「アモルファスSi中のErの発光に対するダングリングボンドの役割」(2004-2006) 
○「エルビウム添加強誘電体薄膜の作製と圧電効果を用いた発光制御」(2007-2007) 
○「エルビウム添加強誘電体薄膜の作製と圧電効果を用いた発光制御」(2008-2008) 
○「低環境負荷金属酸化物を用いた中間バンド半導体薄膜の開発と光電特性」(2011-2012) 
○「強誘電体薄膜を用いたReRAM型高機能不揮発メモリの開発と機構解明」(2014-2015) 
○「鉄系ペロブスカイト酸化膜の強誘電性分極を用いた新規太陽電池の創成」(2016-2018) 

Competitive research funding,Contribution

Collaborative research,Consignment study

○Preparation of Oxide Electronic Thin Films by Pulsed Laser Ablation(1991-1998)
○Study on Optical Integrated Circuit Prepared by Pulsed Laser Ablation(1999-2003)
○Preparation of High-k hitn films on electrode material by pulsed laser ablation(2004-2007)

Classes (Bachelors)

○Presentation and Debate (Freshman Seminar II)(2017)
○Internships A(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Freshman Seminar I(2017)
○Fundamental Physics 2(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Semiconductor Engineering(2017)
○Internships B(2017)
○Solid State Physics for Electronics(2017)
○Electron Devices(2017)
○Introduction to Region-studies(2017)
○Freshman Seminar I(2017)
○Freshman Seminar I(2016)
○Internships B(2016)
○Introduction to Region-studies(2016)
○Freshman Seminar I(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Semiconductor Engineering(2016)
○Internships A(2016)
○Fundamental Physics 2(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Introduction to Electronics, Computer Engineering and Bioinformatics A(2016)
○Solid State Physics for Electronics(2016)
○Electron Devices(2016)

Classes (Graduate Schools)

○Long-Term Internship(2017)
○Seminar on Science & Innovation(2017)
○On-Campus Basic Training(2017)
○On-Campus Basic Training(2017)
○Research in Interdisciplinary Field(2017)
○International Presentation(2017)
○Fundamentals of Materials Characterization A(2017)
○Exercise for Technical Intern(2017)
○Introduction to Management of Technology B(2017)
○Introduction to Management of Technology A(2017)
○Research in Interdisciplinary Field B(2017)
○Oxide Electronics(2017)
○Long-Term Internship(2017)
○Oxide Electronics(2017)
○Research in Interdisciplinary Field A(2017)
○Long-Term Internship(2017)
○On-Campus Basic Training(2017)
○Introduction to Management of Technology B(2017)
○Introduction to Management of Technology A(2017)
○Oxide Electronics(2017)
○Introduction to Management of Technology(2017)
○Career-Path Development Seminar(2017)
○Oxide Electronics(2017)
○Long-Term Internship(2017)
○Introduction to Management of Technology B(2017)
○International Communication Exercise(2017)
○Research in Interdisciplinary Field(2017)
○Overseas Research(2017)
○International Communication Exercise(2017)
○Introduction to Management of Technology A(2017)
○Career-Path Development Seminar(2017)
○Seminar on Science & Innovation(2017)
○International Presentation(2017)
○International Presentation(2016)
○International Presentation(2016)
○Overseas Research(2016)
○Seminar on Science & Innovation(2016)
○On-Campus Basic Training(2016)
○Introduction to Management of Technology(2016)
○Career-Path Development Seminar(2016)
○Career-Path Development Seminar(2016)
○Oxide Electronics(2016)
○Research in Interdisciplinary Field(2016)
○Introduction to Management of Technology(2016)
○Fundamentals of Materials Characterization A(2016)
○Seminar on Science & Innovation(2016)
○Introduction to Management of Technology(2016)
○On-Campus Basic Training(2016)
○International Communication Exercise(2016)
○Research in Interdisciplinary Field A(2016)
○Long-Term Internship(2016)
○International Communication Exercise(2016)
○Long-Term Internship(2016)
○Research in Interdisciplinary Field B(2016)
○Introduction to Management of Technology(2016)
○Exercise for Technical Intern(2016)
○Research in Interdisciplinary Field(2016)
○International Communication Exercise(2016)
○International Communication Exercise(2016)
○On-Campus Basic Training(2016)
○Long-Term Internship(2016)
○Long-Term Internship(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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