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Researcher Information

last modified：2024/04/24

Professor　SUZUKI Masakatsu

Faculty, Affiliation

Institute of Liberal Arts and Science　Faculty of Global Standard Education

College and School Educational Field


Laboratory

Academic Background

【Academic background(Doctoral/Master's Degree)】
Osaka University　Master　Graduate School of Engineering Science　Department of Physics　199203　Completed
【Academic background(Bachelor's Degree)】
Osaka University　Department of Material Physics　199003
【Degree】
Doctor of Science
Master of Engineering

Career

Panasonic Corporation (Formerly, Matsushita Electric Industrial Co., Ltd.)　Central Research Laboratory　Researcher(1992/04-2000/03)
Panasonic Corporation (Formerly, Matsushita Electric Industrial Co., Ltd.)　Semiconductor Company　Staff Engineer(2000/04-2012/03)
Waseda University　School of Science and Engineering　Lecturer (part-time)(2006/04-2010/03)
Panasonic Corporation　Device Company, Semiconductor Group　Senior Engineer(2012/04-2014/03)
Tower Partners Semiconductor Co., Ltd. (Formerly, TowerJazz Panasonic Semiconductor Co.,Ltd.)　Process Technology Center　Senior Engineer, Section Manager(2014/04-2024/02)
Kanazawa University　Institute of Liberal Arts and Science　Professor(2024/03-)

Year & Month of Birth

1968/03

Academic Society

The Physical Society of Japan
The Japan Society of Applied Physics

Award

○JJAP Young Scientist Award(1997/10)

Specialities

Electronic materials/Electric materials、Electron device/Electronic equipment、Applied materials、Computational science、Condensed matter physics I、Condensed matter physics II

Speciality Keywords

Semiconductor laser, Image sensor, Li ion battery, Solar cells, First principles caluculation, Nitride semiconductor, Transition metal compound, Magnetic material

Research Themes

Books

  • 　S. Nakamura and S. F. Chichibu (Edit.); T. Uenoyama and M. Suzuki (Chapter 2)　Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes　Taylor & Francis (CRC Press)　2000/03/09
  • 　Stephen J. Pearton (Edit.), T. Uenoyama and M. Suzuki (Chapter 6)　GaN and Related Materials II (Optoelectronic Properties of Semiconductors and Superlattices) 　Gordon and Breach (CRC Press)　2000/01
  • 　J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (Edit.), M. Suzuki and T. Uenoyama (Chapter A6)　Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (EMIS DATAREVIEWS SERIES, No23)　The Institution of Electrical Engineers (INSPEC)　1999/01
  • 　Bernard Gil (Edit.), M. Suzuki and T. Uenoyama (Chapter 8)　Group III Nitride Semiconductor Compounds: Physics and Applications　Oxford University Press (Clarendon Press)　1998/07/16

Papers

  • 　Low temperature lag-induced FPN of dual transfer global shutter pixels under low illumination conditions　X. Ge, A. Lahav, M. Tsutsui, M. Suzuki, T. Imoriya　Proceedings of 2023 International Image Sensors Workshop　Online Library　R2.4　2023/05
  • 　Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics　W. Snoeys, M. Suzuki and 120 other authors　Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PoS (Pixel2022)　420　P083　2023/03/13
  • 　Pixel pitch hybrid bonding and three layer stacking technology for BSI image sensor　K. Tanida, S. Suzuki, T. Seo, Y. Morinaga, H. Korogi, M. Tetani, R. Eto, T. Yamashita, Y. Kato, N. Sato, T. Shimizu, T. Hanawa, H. Kubo, K. Ueda, F. Ito, Y. Noguchi, M. Nakamura, R. Mizukoshi, M. Takeuchi, M. Suzuki, N. Niisoe, I. Miyanaga, A. Ikeda, S. Matsumoto　Proceedings of 2022 IEEE International Interconnect Technology Conference (IITC)　5-7　2022/06/27
  • 　Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel　Toshifumi Yokoyama, Masafumi Tsutsui, Masakatsu Suzuki, Yoshiaki Nishi, Ikuo Mizuno, Assaf Lahav　Sensors　18　2　349-360　2018/01/25
  • 　Development of low noise memory node in a 2.8μm global shutter pixel with dual transfer　M. Tsutsui, T. Hirata, K. Tachikawa, I. Mizuno, M. Suzuki, D. Veinger, A. Birman, A. Lahav　Proceedings of 2017 International Image Sensors Workshop　28-31　2017/05

show all

  • 　Design of double micro lens structure for 2.8um global shutter pixel 　T. Yokoyama, M. Suzuki, Y. Nishi, I. Mizuno, A. Lahav　Proceedings of 2017 International Image Sensors Workshop　398-401　2017/05
  • 　Cross talk, quantum efficiency and parasitic light sensitivity comparison for different near infra-red enhanced sub 3um global shutter pixel architectures　A. Lahav, D. Veinger, A. Birman, M. Suzuki, T. Hirata, K. Tachikawa, M. Tsutsui, T. Yokoyama, Y. Nishi, I. Mizuno　Proceedings of 2017 International Image Sensors Workshop　390-393　2017/05
  • 　A 1.4um front-side illuminated image sensor with novel light guiding structure consisting of stacked lightpipes　Hisashi Watanabe, Jun Hirai, Motonari Katsuno, Keishi Tachikawa, Sho Tsuji, Masao Kataoka, Saori Kawagishi, Hiroko Kubo, Hisashi Yano, Shigeru Suzuki, Gen Okazaki, Kouichi Yamamoto, Hiroshi Fujinaka, Takashi Fujioka, Masakatsu Suzuki　Proceedings of 2011 IEEE International Electron Devices Meeting (IEDM)　197-200　2011/12
  • 　Electronic Band Structure of Li2CuO2 and Application to Battery Electrode　Norikazu Tanaka, Masakatsu Suzuki, Kazuko Motizuki　Japanese Journal of Applied Physics　39　S1　248-250　2000/01
  • 　Electronic and magnetic properties of Li2CuO2　Norikazu Tanaka, Masakatsu Suzuki, Kazuko Motizuki　Physica B: Condensed Matter　284-288　1388-1389　2000/07
  • 　Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content　A. Tsujimura, A. Ishibashi, Y. Hasegawa, S. Kamiyama, I. Kidoguchi, N. Otsuka, R. Miyanaga, G. Sugahara, M. Suzuki, M. Kume, K. Harafuji, Y. Ban　Physica status solidi (a)　176　1　53-57　1999/11/22
  • 　Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content　A. Tsujimura, Y. Hasegawa, A. Ishibashi, S. Kamiyama, I. Kidoguchi, R. Miyanaga, M. Suzuki, M. Kume, K. Harafuji, Y. Ban　Electronics Letters　35　12　998-998　1999/06/10
  • 　Electronic Structure and Magnetic Properties of Li2CuO2　Norikazu Tanaka, Masakatsu Suzuki, Kazuko Motizuki　Journal of the Physical Society of Japan　68　5　1684-1692　1999/05/15
  • 　Theoretical optical gain in InGaN quantum wells　Takeshi Uenoyama, Masakazu Suzuki　Materials Science and Engineering: B　59　1-3　376-381　1999/05/06
  • 　Electronic band structure of Li2CuO2　N. Tanaka, M. Suzuki, K. Motizuki　Journal of Magnetism and Magnetic Materials　196-197　667-668　1999/05/01
  • 　Effect of crystal symmetry on electronic structures of CuInSe2 and CuIn3Se5　M. Suzuki, T. Uenoyama, T. Wada, T. Hanada, Y. Nakamura　Inst. Phys. Conf. Ser. (Proc. 11th Int. Conf. on Ternary and Multinary Compounds (ICTMC11))　152　197-200　1998
  • 　Effect of crystal symmetry, strain and spin–orbit coupling on electronic and optical properties of III-nitrides　M Suzuki, T Uenoyama　Journal of Crystal Growth　189-190　625-629　1998/06/15
  • 　Effect of crystal symmetry on electronic structures of CuInSe2 and related compounds　Masakatsu Suzuki, Takeshi Uenoyama, Takahiro Wada, Takeshi Hanada, Yoshio Nakamura　Japanese Journal of Applied Physics　36　9A　L1139-L　1997/09/15
  • 　Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells　Takeshi Uenoyama, Masakatsu Suzuki　Physics and Simulation of Optoelectronic Devices V (Proc. Soc. Photo-Opt. Instr. Eng)　2994　94-101　1997/06/06
  • 　Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum Well Structures　M. Suzuki, T. Uenoyama　Mat. Res. Soc. Proc.　468　251-262　1997/03
  • 　First principles calculation of effective mass parameters of GaN　Masakatsu Suzuki,Takeshi Uenoyama　Solid-State Electronics　41　2　271-274　1997/02
  • 　Strain effect on electronic and optical properties of GaN/AlGaN quantum well lasers　Masakatsu Suzuki, Takeshi Uenoyama　Journal of Applied Physics　80　12　6868-6874　1996/12/15
  • 　Optical gain and crystal symmetry in III–V nitride lasers　Masakatsu Suzuki, Takeshi Uenoyama　Applied Physics Letters　69　22　3378-3380　1996/11/25
  • 　Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane　Masakatsu Suzuki, Takeshi Uenoyama　Japanese Journal of Applied Physics　35　8A　L953-L956　1996/08/01
  • 　Theoretical estimation of LD performance in zincblende and wurtzite III-V nitrides　T. Uenoyama, M. Suzuki　Proc. Int. Symp. on Blue Laser and Light Emitting Diodes (ISBLLED)　271-276　1996/03
  • 　Strain effect on GaN/AlGaN quantum well laser diodes　M. Suzuki, T. Uenoyama　Proc. Int. Symp. on Blue Laser and Light Emitting Diodes (ISBLLED)　368-371　1996/03
  • 　Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers　M. Suzuki, T. Uenoyama　Mat. Res. Soc. Proc.　421　171-182　1996/03
  • 　Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers　Masakatsu Suzuki, Takeshi Uenoyama 　Japanese Journal of Applied Physics　35　2S　1420-1423　1996/02/01
  • 　Theoretical Study of Momentum Matrix Elements of GaN　Masakatsu Suzuki, Takeshi Uenoyama　Japanese Journal of Applied Physics　35　2R　543-545　1996/02/01
  • 　Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations　T. Uenoyama, M. Suzuki　Mat. Res. Soc. Proc.　395　171-182　1995/12
  • 　Optical properties of wurtzite GaN/AlGaN quantum wells Inst. Phys. Conf. Ser. 142 (1996) 915-918; 　M. Suzuki, T. Uenoyama, S. Kamiyama　Inst. Phys. Conf. Ser. (Proc. 6th Int. Conf. on Silicon Carbide and Related Materials (ICSCRM95))　142　915-918　1996
  • 　First-Principles Calculation of Effective Mass Parameters of Gallium Nitride　Masakatsu Suzuki, Takeshi Uenoyama　Japanese Journal of Applied Physics　34　7R　3442-3446　1995/07/01
  • 　First-principles calculations of effective-mass parameters of AlN and GaN　Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase　Physical Review B　52　11　8132-8139　1995/09/15
  • 　Valence subband structures of wurtzite GaN/AlGaN quantum wells　Takeshi Uenoyama, Masakatsu Suzuki　Applied Physics Letters　67　17　2527-2529　1995/10/23
  • 　Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers　Takeshi UENOYAMA, Masakatsu SUZUKI, Satoshi KAMIYAMA　Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials　689-691　1995/08
  • 　Optical gain analysis of wurtzite InGaN quantum-well lasers using k・p theory　S. Kamiyama, M. Suzuki, T. Uenoyama, Y. Ban　Proc. Topical Workshop on III-V Nitrides　205-208　1997/01
  • 　Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe　Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase　Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials　74-76　1993/09
  • 　Interaction between N2 and stabilized ZnSe surface　T. Uenoyama, T. Nakao, M. Suzuki　Journal of Crystal Growth　138　1-4　301-304　1994/04
  • 　Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZnSe -　Taketoshi Nakao, Masakatsu Suzuki, Takeshi Uenoyama, Yusuke Funayose　Materials Science Forum　196-201　293-296　1995/11
  • 　Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser　Satoshi Kamiyama, Kiyoshi Ohnaka, Masakatsu Suzuki, Takeshi Uenoyama　Japanese Journal of Applied Physics　34　7A　L821　1995/07/01
  • 　Electronic band structure in the ferrimagnetic state of Mn2Sb　M Suzuki, M Shirai, K Motizuki　Journal of Physics: Condensed Matter　4　1　L33-L36　1992/01/06
  • 　Theoretical Study of Magnetic Ordering of Cu2Sb-type Intermetallic Compounds　Kazuko Motizuki, Masakatsu Suzuki, Masafumi Shirai　Japanese Journal of Applied Physics　32　S3　221-226　1993/01/01

Conference Presentations

Others

  • 　A 1.4um front-side illuminated image sensor with novel light guiding structure consisting of stacked lightpipes: Smart FSI　Watanabe Hisashi, Hirai Jun, Katsuno Motonari, Tachikawa Keishi, Kataoka Masao, Kawagishi Saori, Kubo Hiroko, Yano Hisashi, Suzuki Shigeru, Okazaki Gen, Yamamoto Kouichi, Fujinaka Hiroshi, Fujioka Takashi, Suzuki Masakatsu　ITE Technical Report　36　18　37-40　2012/03
  • 　Electronic band structure of Li2CuO2 and application to battery electrode　N. Tanaka, M. Suzuki, K. Motizuki　Bulletin of Okayama University of Science. A, Natural Sciences　35　51-54　2000/03/31
  • 　Analysis of optical gain of GaN-based lasers with first-principles calculations　UENOYAMA Takeshi, SUZUKI Masakatsu　OYOBUTURI　66　9　956-959　1997/09
  • 　Optical Properties of GaN/AlGaN Quantum Wells　T. Uenoyama, M. Suzuki　IEICE technical report. Optoelectronics　96　445　1-5　1997/01/17
  • 　Mechanism of adsorption/dissociation reactions of excited nitrogen molecules on the surface of ZnSe-based semiconductors and p-type doping　T. Uenoyama, T. Nakao, M. Suzuki　The Japan Society of Applied Physics, Solid State Physics and Applications Division, Technical Report　451　31-36　1993

Arts and Fieldwork

Patent

Theme to the desired joint research

Grant-in-Aid for Scientific Research

Competitive research funding,Contribution

Collaborative research,Consignment study

Classes (Bachelors)

Classes (Graduate Schools)

International Project

International Students

Lecture themes

Others (Social Activities)

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