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Researcher Information

last modified:2018/04/02

Associate Professor KAWAE Takeshi

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Faculty, Affiliation

Faculty of Electrical, Information and Communication Engineering,Institute of Science and Engineering

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
School of Electrical and Computer Engineering, College of Science and Engineering


 TEL:076-234-4881 FAX:076-234-4870

Academic Background

【Academic background(Doctoral/Master's Degree)】
Tohoku University Doctor 200303 Completed


Institute of Fluid Science(2003/04/01-2004/03/31)

Year & Month of Birth


Academic Society


○10th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity Youngt Scientsit Award(2010/07/02)
○46th japan electromaterials society conference best presentation award(2009/11/20)


Electronic materials/Electric materials

Speciality Keywords

functional oxide materials

Research Themes

fabrication of dielectric and ferroelectric thin films

fabrication of diamond films and its device applications

highTc superconductor devices


  •  Influences of Pr and Mn co-substitution on crystallinity and electric properties of BiFeO3 thin films Ceramics Society of Japan 118 652 2010/07


  •  Charging effect characteristic in one-dimensional array on Bi2Sr2CaCu2O8+d intrinsic Josephson junctions JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 44 24 L766-L769 2005/06
  •  Influence of charging energy on Cooper-pair tunneling in Bi-2212 small intrinsic Josephson junctions IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 13 2 897-900 2003/08
  •  Junction area dependence of critical current density in Bi-2212 stacked junction SUPERCONDUCTOR SCIENCE & TECHNOLOGY 14 1102-1105 2001/10
  •  Sub-micron sized intrinsic Josephson junctions in YBa2Cu3O7-x whiskers SUPERCONDUCTOR SCIENCE & TECHNOLOGY 18 pp1159-1162 2005/07
  •  Fabrication of BiFeO3 Thick Films by a Simple Liquid-Phase Epitaxial Growth Technique T. Kawae, H. Tsuda, M. Shiomoto, S. Yamada, M. Nagao, A. Morimoto and M. Kumeda JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47 237-239 2008/01

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  •  Reduced leakage current and ferroelectric properties in Nd and Mn codoped BiFeO3 thin films T. Kawae, H. Tsuda, and A. Morimoto Applied Physics Express 2008/04
  •  Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films 94 112904 2009/03
  •  Hysteresis behavior of capacitance-voltage curve in (Ba0.6Sr0.4)TiO3 thick films caused by strained hetero-structure 2009/09
  •  Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn co-substitution and their ferroelectric properties 2008/09
  •  Structure and Electrical Properties of (Pr, Mn)-codoped BiFeO3/B-doped Diamond Layered Structure 2011/03
  •  Dependence of electric properties of BiFeO3 ultra thin film capacitors on thickness of SrRuO3 bottom electrode Y. Tsukada, Y. Terauchi, T. Nakajima, Y. Nomura, S. Okamura, and A. Morimoto JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 2011/09
  •  Hysteresis loops of polarization and magnetization in BiNd0.05Fe0.97Mn0.03O3/Pt/CoFe2O4 layered epitaxial thin film grown by pulsed laser deposition J. Hu, H. Naganuma, T. Nakajima, Y. Terauchi, S. Okamura, and A. Morimoto THIN SOLID FILMS 519 7727 2011/05

Conference Presentations

Arts and Fieldwork


Theme to the desired joint research

Grant-in-Aid for Scientific Research


Classes (Bachelors)

○Electrical and Electronic Engineering Laboratory III(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Materials for Electronics(2017)
○Freshman Seminar I(2017)
○Experiments in Fundamental Physics(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Freshman Seminar I(2017)
○Freshman Seminar I(2016)
○Freshman Seminar I(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Experiments in Fundamental Physics(2016)
○Electrical and Electronic Engineering Laboratory III(2016)
○Materials for Electronics(2016)
○Materials for Electronics(2016)

Classes (Graduate Schools)

○Oxide Device Processing(2017)
○Oxide Device Processing(2017)
○Oxide Device Processing(2017)
○Devices Process Engineering(2017)
○Oxide Device Processing(2017)
○Devices Process Engineering(2016)
○Oxide Device Processing(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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