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Researcher Information

last modified:2017/05/23

Associate Professor TOKUDA Norio

Mail Laboratory Website

Faculty, Affiliation

Faculty of Electrical and Computer Engineering, Institute of Science and Engineering

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
School of Electrical and Computer Engineering, College of Science and Engineering

Laboratory

Academic Background

【Academic background(Doctoral/Master's Degree)】
University of Tsukuba Master 200203 Completed
University of Tsukuba Doctor 200503 Completed
【Academic background(Bachelor's Degree)】
University of Tsukuba 200003
【Degree】
Doctor of Philosophy in Engineering

Career

National Institute of Advanced Industrial Science and Technology (AIST) AIST Research Fellow (post-doc.)(2005/04/01-2009/03/31)
Kanazawa University Institute of Science and Engineering Assistant Professor(2009/04/01-2011/08/31)
Kanazawa University Institute of Science and Engineering Associate Professor(2011/09/01-)

Year & Month of Birth

1976/06

Academic Society

The Japan Society of Applied Physics
The Surface Science Society of Japan
Society of Nano Science and Technology
Japanese Association for Crystal Growth
The Surface Finishing Society of Japan

Award

○President Award(2005/03)
○Dean Award(2005/03)
○20th Diamond Symposium Poster Session Award(2006/11)
○Incentive Award for Excellent Presentation(2007/03)
○Young Best Presenter Award (Society of Nano Science and Technology)(2007/05/22)
○Incentive Award for Excellent Presentation(2008/11)
○The 11th excellent presentation award from the surface finishing society of Japan(2010/03/16)
○The 76th JSAP Autumn Meeting, 2015 Poster Award(2015/10/01)
○The 76th JSAP Autumn Meeting, 2015 Poster Award(2015/10/01)

Specialities

Inorganic materials/Physical properties

Speciality Keywords

semiconductor, surface science, diamond, graphene

Research Themes

Low dimensional nano-structures of silicon and carbon materials

Low dimensional nano-structures of silicon and carbon materials Our objective is a creation of a novel nano-electronics using quantum-mechanical effects. So, we study on fabricating mesoscopic structures using silicon and carbon materials.

Crystal growth, and control of doping and surface of diamond

Crystal growth, and control of doping and surface of diamond We study on diamond homoepitaxy, doping, and surface control using microwave plasma-enhanced chemical vapor deposition.

Books

  •  Yang, Nianjun (Ed.) (Chapter 1) Tokuda, Norio Novel Aspects of Diamond Springer International Publishing 2014/11

Papers

  •  Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth Norio Tokuda, Toshiharu Makino, Takao Inokuma, and Satoshi Yamasaki JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 51 090107 2012
  •  Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface Norio Tokuda, Hitoshi Umezawa, Hiromitsu Kato, Masahiko Ogura, Satoshi Gonda, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki Appl. Phys. Express 2 5 055001 2009/04
  •  Flattening of oxidized diamond (111) surfaces with H2SO4/H2O2 solutions Norio Tokuda, Daisuke Takeuchi, Sung-Gi Ri, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 18 2-3 213-215 2009/02
  •  Atomically flat diamond (111) surface formation by homoepitaxial lateral growth Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Masahiko Ogura, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 17 7-10 1051-1054 2008/07
  •  Roughening of atomically flat diamond (111) surface by a hot HNO3/H2SO4 solution Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 17 4-5 486-488 2008/04

show all

  •  Hillock-Free Heavily Boron-doped Homoepitaxial Diamond Films on Misoriented (001) Substrates Norio Tokuda, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 46 4A 1469-1470 2007/04
  •  The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - Study of surface morphology Norio Tokuda, Takeyasu Saito, Hitoshi Umezawa, Hideyo Okushi, and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 16 2 409-411 2007/02
  •  Selective Growth of Ag Nanowires on Si(111) Surfaces by Electroless Deposition Norio Tokuda, Naoyuki Sasaki, Hidenobu, Watanabe, Kazushi Miki, Satoshi Yamasaki, Ryu Hasunuma and Kikuo Yamabe JOURNAL OF PHYSICAL CHEMISTRY B 109 26 12655-12657 2005/07
  •  Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water Norio Tokuda, Masayasu Nishizawa, Satoshi Yamasaki, Kazushi Miki, Ryu Hasunuma and Kikuo Yamabe Jpn. J. Appl. Phys. 44 19 L612-L615 2005/04
  •  Fabrication of Cu Nanowires along Atomic Step Edge Lines on Si(111) Substrates Norio Tokuda, Hidenobu Watanabe, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe APPLIED SURFACE SCIENCE 237 1-4 528-531 2004/10
  •  Leakage Current Distribution and Dielectric Breakdown of Cu-Contaminated Thin SiO2 Norio Tokuda, Shingo Nishiguchi, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe JOURNAL OF THE ELECTROCHEMICAL SOCIETY 151 4 F81-F86 2004/04
  •  Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films Norio Tokuda, Shingo Nishiguchi, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe SOLID STATE PHENOMENA 95-96 641-646 2004
  •  Selective Growth of Cu Nanowires on Si(111) Substrates Norio Tokuda, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe Jpn. J. Appl. Phys. 42 2B L1210-L1212 2003/10
  •  Leakage Current Distribution of Cu-Contaminated Thin SiO2 Norio Tokuda, Takahiro Kanda, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe Jpn. J. Appl. Phys. 42 2B L160-L162 2003/02
  •  SiO2 Surface and SiO2/Si Interface Topography Change by Thermal Oxidation Norio Tokuda, Masahide Murata, Daisuke Hojo and Kikuo Yamabe JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 40 8 4763-4768 2001/08
  •  Diamond Schottky-pn diode with high forward current density and fast switching operation Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Hiromichi Ohashi, Hideyo Okushi, and Satoshi Yamasaki APPLIED PHYSICS LETTERS 94 26 262101 2009/06
  •  Diamond nanowires, a new approach towards next generation electrochemical gene sensor platforms C. E. Nebel, N. Yang, H. Uetsuka, E. Osawa, N. Tokuda, O. Williams DIAMOND AND RELATED MATERIALS 18 5-8 910-917 2009/05
  •  Characterization of specific contact resistance on heavily phosphorus-doped diamond films Hiromitsu Kato, Daisuke Takeuchi, Norio Tokuda, Hitoshi Umezawa, Hideyo Okushi, Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 18 5-8 782-785 2009/05
  •  Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p-i-n junctions Toshiharu Makino, Sung-Gi Ri, Norio Tokuda, Hiromitsu Kato, Satoshi Yamasaki, Hideyo Okushi DIAMOND AND RELATED MATERIALS 18 5-8 764-767 2009/05
  •  Selective Growth of Buried n+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki Appl. Phys. Express 2 5 055502 2009/04
  •  High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers Kazuihiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Masahiko Ogura, Toshiharu Makino, Daisuke Takeuchi, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki APPLIED PHYSICS LETTERS 94 15 152109 2009/04
  •  Recovery of negative electron affinity by annealing on (111) oxidized diamond surfaces Daisuke Takeuchi, Sung-Gi Ri, Norio Tokuda, Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 18 2-3 206-209 2009/02
  •  Doping-induced changes in the valence band edge structure of homoepitaxial B-doped diamond films below Mott's critical density PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 206 1991-1995 2009/09
  •  Vertically aligned diamond nanowires: Fabrication, characterization, and application for DNA sensing PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 206 2048-2056 2009/09
  •  Diamond Schottky-pn diode with high forward current density PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 206 2086-2090 2009/09
  •  Low specific contact resistance of heavily phosphorus-doped diamond film Hiromitsu Kato, Hitoshi Umezawa, Norio Tokuda, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki APPLIED PHYSICS LETTERS 93 9 202103 2008/11
  •  Electrical and light-emitting properties of homoepitaxial diamond p-i-n junction Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Shokichi Kanno, Satoshi Yamasaki, and Hideyo Okushi PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 205 9 2200-2206 2008/08
  •  Electrical activity of doped phosphorus atoms in (001) n-type diamond Hiromitsu Kato, Daisuke Takeuchi, Norio Tokuda, Hitoshi Umezawa, Satoshi Yamasaki, and Hideyo Okushi PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 205 9 2195-2199 2008/08
  •  Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments Sung-Gi Ri, Daisuke Takeuchi, Norio Tokuda, Hideyo Okushi, Satoshi Yamasaki APPLIED PHYSICS LETTERS 92  112112 2008/03
  •  Mapping of extended defects in B-doped (001) homoepitaxial diamond films by electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique Sung-Gi Ri, Xiao Li Yuan, Takashi Sekiguchi, Norio Tokuda, Masahiko Ogura, Hideyo Okushi and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 17 4-5 489-493 2008/04
  •  Photoelectron emission from heavily B-doped homoepitaxial diamond films Daisuke Takeuchi, Norio Tokuda, Masahiko Ogura, and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 17 4-5 813-816 2008/04
  •  Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity Daisuke Takeuchi, Toshiharu Makino, Sung-Gi Ri, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyo Okushi, and Satoshi Yamasaki Applied Physics Express 1 1 015004 2008/01
  •  Direct observation of two-dimensional growth at SiO2/Si(111) interface Daisuke Hojo, Norio Tokuda, Kikuo Yamabe THIN SOLID FILMS 515 20-21 7892-7898 2007/08
  •  Inhomogeneous DNA bonding to polycrystalline CVD diamond C. E. Nebel, H. Uetsuka, B. Rezek, D. Shin, N. Tokuda, and T. Nakamura DIAMOND AND RELATED MATERIALS 16 8 1648-4651 2007/08
  •  Diamond and biology Christoph E. Nebel, Dongchan Shin, Bohuslav Rezek, Norio Tokuda, Hiroshi Uetsuka and Hideyuki Watanabe Journal of the Royal Society Interface 4 14 439-461 2007/06
  •  Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p-i-n junction Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki and Hideyo Okushi DIAMOND AND RELATED MATERIALS 16 4-7 1025-1028 2007/04
  •  Cycle of two-step etching process using ICP for diamond MEMS applications Takatoshi Yamada, Hiromichi Yoshikawa, Hiroshi Uetsuka, Somu Kumaragurubaran, Norio Tokuda, Shin-ichi Shikata DIAMOND AND RELATED MATERIALS 16 4-7 996-999 2007/04
  •  Surface electronic properties on boron doped (111) CVD homoepitaxial diamond films after oxidation treatments Sung-Gi Ri, Daisuke Takeuchi, Christoph E. Nebel, Norio Tokuda, Yuichi Yamazaki, Satoshi Yamasaki and Hideyo Okushi DIAMOND AND RELATED MATERIALS 16 4-7 831-835 2007/04
  •  Electrochemical grafting of boron-doped single-crystalline CVD-Diamond with nitrophenyl molecules Hiroshi Uetsuka, Dongchan Shin, Norio Tokuda, Kazuhiko Saeki, and Nebel Erwin Christoph LANGMUIR 23 6 3466-3472 2007/03
  •  Leakage current analysis of diamond Schottky barrier diode Hitoshi Umezawa, Takeyasu Saito, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri, Hiromichi Yoshikawa, Shin-ich Shikata APPLIED PHYSICS LETTERS 90 073506 2007/02
  •  Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling Hitoshi Umezawa, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri and Shin-ichi Shikata DIAMOND AND RELATED MATERIALS 15 11-12 1949-1953 2006/11
  •  Energetics of dopant atoms in subsurface positions of diamond semiconductor Takehide Miyazaki, Hiromitsu Kato, Sung-Gi Ri, Masahiko Ogura, Norio Tokuda, and Satoshi Yamasaki SUPERLATTICES AND MICROSTRUCTURES 40 4-6 574-579 2006/10
  •  Photo-and electrochemical bonding of DNA to single crystalline CVD diamond D. Shin, B. Rezek, N. Tokuda, D. Takeuchi, H. Watanabe, T. Nakamura, T. Yamamoto, and C. E. Nebel PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 203 13 3245-3272 2006/10
  •  High-efficiency Excitonic Emission with Deep-ultraviolet Light from (001)-oriented Diamond p-i-n Junction Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki, Hideyo Okushi JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45 39 L1042-L1044 2006/10
  •  Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA sensing Dongchan Shin, Norio Tokuda, Bohuslav Rezek, Christoph E. Nebel ELECTROCHEMISTRY COMMUNICATIONS 8 5 844-850 2006/05
  •  Surface conductive layers on (111) diamonds after oxygen treatments Sung-Gi Ri, Christoph E. Nebel, Daisuke Takeuchi, Bohuslav Rezek, Norio Tokuda, Satoshi Yamasaki and Hideyo Okushi DIAMOND AND RELATED MATERIALS 15 4-8 692-697 2006/04
  •  Utilization of Si atomic steps for Cu nanowire fabrication Ryu Hasunuma, Takanobu Yada, Junichi Okamoto, Daisuke Hojo, Norio Tokuda and Kikuo Yamabe Science and Technology of Advanced Materials 6 667-670 2005/09
  •  Nonuniformity in Ultrathin SiO2 on Si(111) Characterized by Conductive Atomic Force Microscopy Ryu Hasunuma, Junichi Okamoto, Norio Tokuda and Kikuo Yamabe JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 43 11B 7861-7865 2004/11
  •  Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface Daisuke Hojo, Norio Tokuda and Kikuo Yamabe JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42 5B L561-L563 2003/05
  •  Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces Daisuke Hojo, Hitoshi Oeda, Norio Tokuda and Kikuo Yamabe JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42 4B 1903-1906 2003/04
  •  Leakage current distribution in ultrathin oxide on silicone surface with step/terrace structures Masahide Murata, Norio Tokuda, Daisuke Hojo and Kikuo Yamabe THIN SOLID FILMS 414 1 56-62 2002/07
  •  Atomic Topography Change of SiO2/Si Interfaces during Thermal Oxidation Daisuke Hojo, Norio Tokuda and Kikuo Yamabe JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 41 5A L505-L508 2002/05
  •  Growth of atomically step-free surface on diamond {111} mesas Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki DIAMOND AND RELATED MATERIALS 19 4 288-290 2010/04
  •  原子的平坦面を有するダイヤモンド(111)膜の成長 徳田規夫、松本翼、猪熊孝夫、梅沢仁、小倉政彦、加藤宙光、牧野俊晴、竹内大輔、大串秀世、寺地徳之、山部紀久夫、有屋田修、山崎聡 NEW DIAMOND 32 9 2016
  •  原子的に制御されたダイヤモンド表面の創出 徳田規夫, 山崎聡, 猪熊孝夫 精密工学会誌 80 433 2014
  •  Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films Tokuda, N. , Ogura, M., Matsumoto, T., Yamasaki, S., Inokuma, T. Physica Status Solidi (A) Applications and Materials Science 213 2051 2016
  •  Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics Matsumoto, T. , Kato, H., Oyama, K., Makino, T., Ogura, M., Takeuchi, D., Inokuma,T., Tokuda, N, Yamasaki, S. Scientific Reports 6 31585 2016
  •  Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel Kazuhiro Nakanishi, Hiroki Kuroshima, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda Diamond Relat. Mater.  68 127 2016
  •  H-terminated diamond field effect transistor with ferroelectric gate insulator Ryota Karaya, Hiroki Furuichi, Takashi Nakajima, Norio Tokuda, Takeshi Kawae Appl. Phys. Lett. 108 242101 2016
  •  Time-resolved cyclotron resonance on dislocation-free HPHT diamond I. Akimoto, N. Naka, N. Tokuda Diamond Relat. Mater. 63 38 2016
  •  Perfect selective alignment of nitrogen-vacancy centers in diamond Takahiro Fukui, Yuki Doi, Takehide Miyazaki, Yoshiyuki Miyamoto, Hiromitsu Kato, Tsubasa Matsumoto, Toshiharu Makino, Satoshi Yamasaki, Ryusuke Morimoto, Norio Tokuda, Mutsuko Hatano, Yuki Sakagawa, Hiroki Morishita, Toshiyuki Tashima, Shinji Miwa, Yoshishige Suzuki and Norikazu Mizuochi Appl. Phys. Express 7 055201 2014
  •  Density functional studies of surface potentials for hydrogen and oxygen atoms on diamond (111) surfaces Samar Moustafa, Norio Tokuda, and Takao Inokuma Jpn. J. Appl. Phys. 53 02BD01 2014
  •  Reduction of n-type diamond contact resistance by graphite electrode Tsubasa Matsumoto, Hiromitsu Kato, Norio Tokuda, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki Phys. Stat. Sol. RRL 8 137 2014
  •  Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition Norio Tokuda, Masahiko Ogura, Satoshi Yamsaki, and Takao Inokuma Jpn. J. Appl. Phys.  53 04EH04 2014
  •  Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface Norio Tokuda, Makoto Fukui, Toshiharu Makino, Daisuke Takeuchi, Satoshi Yamsaki, and Takao Inokuma Jpn. J. Appl. Phys. 2013
  •  Fractional Surface Termination of Diamond by Electrochemical Oxidation René Hoffmann, Harald Obloh, Norio Tokuda, Nianjun Yang, Christoph E. Nebel LANGMUIR 28 47 2012
  •  Isotope Effect of Deuterium Microwave Plasmas on the Formation of Atomically Flat (111) Diamond Surfaces Norikazu Mizuochi, Norio Tokuda, Masahiko Ogura, and Satoshi Yamasaki, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 51 090106 2012
  •  Fabrication of (Bi,Pr)(Fe,Mn)O 3 thin films on polycrystalline diamond substrates by chemical solution deposition and their properties Takeshi Kawae, Hiroki Kawasaki, Takashi Nakajima, Norio Tokuda, Soichiro Okamura, Akiharu Morimoto, and Yoshihiko Takano JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 51 09LA08 2012
  •  The creation of a biomimetic interface between boron-doped diamond and immobilized proteins René Hoffmann, Armin Kriele, Harald Obloh, Norio Tokuda, Waldemar Smirnov, Nianjun Yang, Christoph E. Nebel BIOMATERIALS 32 7325
  •  Electron emission from CVD diamond p–i–n junctions with negative electron affinity during room temperature operation D. Takeuchi, T. Makino, H. Kato, M. Ogura, N. Tokuda, K. Oyama, T. Matsumoto, H. Okushi, and S. Yamasaki DIAMOND AND RELATED MATERIALS 20 917
  •  Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure Takeshi Kawae, Yuji Hori, Takashi Nakajima, Hiroki Kawasaki, Norio Tokuda, Soichiro Okamura, Yoshiko Takano, and Akiharu Morimoto ELECTROCHEMICAL AND SOLID STATE LETTERS 14 G31
  •  Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers Kazuihiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Daisuke Takeuchi, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 208 937
  •  Effects of high-temperature annealing on electron spin resonance in SiOx films prepared by R. F. sputtering system A.M.A. Shamekh, N. Tokuda, T. Inokuma JOURNAL OF NON-CRYSTALLINE SOLIDS 357 981
  •  Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering A.M.A. Shamekh, N. Tokuda, T. Inokuma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 50 01BF04
  •  Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage Toshiharu Makino, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Satoshi Tanimoto, Hideyo Okushi, and Satoshi Yamasaki PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 207 2105
  •  Improvement of (001)-oriented diamond p-i-n diode by use of selective grown n+ layer Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 207 2099
  •  Electron Emission from a Diamond (111) p–i–n+ Junction Diode with Negative Electron Affinity during Room Temperature Operation Daisuke Takeuchi, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Tsubasa Matsumoto, Izumi Hirabayashi, Hideyo Okushi, and Satoshi Yamasaki Applied Physics Express 3 041301 2010/03

Conference Presentations

  • A Study of Semiconducting Diamond toward Realization of Innovative Power Devices(2016/07)

Arts and Fieldwork

Patent

Theme to the desired joint research

Grant-in-Aid for Scientific Research

○「原子的に平坦なダイヤモンド(111)表面の大面積形成及びその機能の創出」(2008-2009) 
○「超低損失ダイヤモンドパワーデバイス開発のための基盤研究」(2012-2014) 

Classes (Bachelors)

○Semiconductor Engineering(2017)
○Electrical and Electronic Engineering Laboratory II(2017)
○Student-Initiated Project(2017)
○Introduction to Region-studies(2017)
○Electrical and Electronic Engineering Laboratory I(2017)
○Semiconductor Engineering(2016)
○Student-Initiated Project(2016)
○Electrical and Electronic Engineering Laboratory I(2016)
○Electrical and Electronic Engineering Laboratory II(2016)

Classes (Graduate Schools)

○Surface and Interface Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2016)
○Surface and Interface Engineering(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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