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Researcher Information

last modified:2017/05/23

Professor IIYAMA, Koichi

Mail Laboratory Website

Faculty, Affiliation

Faculty of Electrical and Computer Engineering, Institute of Science and Engineering

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
School of Electrical and Computer Engineering, College of Science and Engineering

Laboratory

High speed electronics laboratory TEL:076-234-4887 FAX:076-234-4870

Academic Background

【Academic background(Doctoral/Master's Degree)】
Kanazawa University Master 198703 Completed
【Academic background(Bachelor's Degree)】
Kanazawa University 198503

Career

Yokogawa Hewlett-Packard Ltd.(1987/04/01-1988/03/31)
Kanazawa University Faculty of Engineering(1988/04/01-1995/05/31)
Kanazawa University Faculty of Engineering(1995/06/01-1996/09/30)
Kanazawa University Faculty of Engineering(1996/10/01-)
Kanazawa University(2009/04/01-)

Year & Month of Birth

1963/03

Academic Society




Award

Specialities

Electron device/Electronic equipment、、Measurement engineering

Speciality Keywords

Optical measurements, Optical communications, Optical fiber, Optical waveguide

Research Themes

A Study on High Speed Photodetectors

High-speed silicon photodiodes/compound semiconductor photodiodes are studied. Photodiodes and opto-electronic integrated circuits utilizing CMOS process are also studied.

A Study on Optical Sensing Systems

Optical ranging systems and two-dimensional object profiling utilizing optical interference, and optical reflectmetry for characterizing optical devices such as optical fibers and optical waveguides are studied.

A Study on Lightwave Circuits

Optical fibers, optical waveguides, and lightwave circuits such as optical wavelength filters, optical switches and optical interferometers are studied.

Books

Papers

  •  A preliminary study of MIS diodes with nm-thin GaAs-oxide layers SOLID-STATE ELECTRONICS 43 8 1571-1576 1999/08
  •  Application of brightness of scanning electron microscope images to measuring thickness of nanometer-thin SiO2 layers on Si substrates Japanese Journal of Applied Physics 40 Part 1 10 5861-5864 2001/10
  •  Chromatic dispersion measurements of long optical fibers by means of optical ranging system using a frequency-shifted feedback laser IEEE Journal of Selected Topics on Quantum Electronics 7 3 484-489 2001/03
  •  Frequency domain detection of coherence multiplexed sensor signals by using an optical loop with a frequency shifter JOURNAL OF LIGHTWAVE TECHNOLOGY 15 11 2069-2075 1997/11
  •  I-V characteristics of Schottky/Metal-Insulator-Semiconductor diodes with tunnel thin barriers Japanese Journal of Applied Physics 39 Part 1 7B 4521-4522 2000/07

show all

  •  Phase-decorrelated FMCW reflectometry for long optical fiber characterization by using a laser diode with modulated external cavity IEICE TRANSACTIONS ON ELECTRONICS E83-C 3 428-434 2000/03
  •  Reverse currents of Schottky gates MESFET/HEMTs: Field emission and tunnel current SOLID-STATE ELECTRONICS 42 3 447-451 1998/03
  •  Two-levels of Ni/n-GaAs Schottky barrier heights formed on a wafer by controlling pH of pretreatment chemicals: Effect of oxygen adsorption Japanese Journal of Applied Physics 39 Part 1 10 5788-5793 2000/10
  •  A novel method for measuring chromatic dispersion of long optical fibers by means of high resolution optical ranging system using a frequency-shifted feedback laser Symposium on Optical Fiber Measurements 185-188 2000/09
  •  A preliminary study of MIS diodes with nm-thin GaAs-oxide layers Topical Workshop on Heterostructure Microelectronics for Information Systems and Applications 82-83 1998/08
  •  A proposal for improving cutoff-frequency・breakdown-voltage products of HEMTs 10th International Conference on Indium Phosphide and Related Materials 663-666 1998/05
  •  Depletion and accumulation mode operation of GaAs MISFETs with nm-thin gate insulating layers formed by UV & ozone International Symposium on Compound Semiconductors 56 2001/10
  •  Erbium/Ytterbium co-doped optical waveguide amplifier in soda-lime glass by silver ion exchange The Pacific Rim Conference on Lasers and Electro-Optics 1087-1088 1999/09
  •  I-V characteristics of Schottky/MIS diodes with tunnel thin barriers International Symposium on Surface Science for Micro- and Nano-Deice Fabrication 172 1999/11
  •  Mid-range frequency-modulated continuous-wave reflectometry using a narrow-linewidth laser diode with linearized optical frequency sweep The Pacific Rim Conference on Lasers and Electro-Optics 290 1997/07
  •  Molecular orbital study of electronic states of InP (100) surfaces by discrete variational Xα method International Symposium on Compound Semiconductors 14 2001/10
  •  Phase-decorrelated FMCW reflectometry for long optical fibers by using a laser diode with modulated external cavity 13th International Conference on Optical Fiber Sensors 454-457 1999/04
  •  Study of GaAs (100) surface with adsorbed oxygen International Conference on Indium Phosphide and Related Materials 318-321 2001/05
  •  Surface states of (100) n-GaAs with adsorbed oxygens and their dependence on chemical treatment 25th International Conference on the Physics of Semiconductor 327-328 2000/09
  •  Two-levels of Ni/n-GaAs Schottky barriers formed on a wafer by controlling pH of pretreatment chemicals International Workshop on Surfaces and Interfaces of Mesoscopic Devices 79 1999/12
  •  Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process IEEE TRANSACTIONS ON ELECTRON DEVICES 49 11 1856–1862 2002/11
  •  Structural and electrical characterization of oxidated, nitridated and oxi-nitraidated (100) GaAs surfaces JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42 7A 4264-4272 2003/07
  •  Equivalent circuit model of InAlAs/InGaAs/InP heterostructure metal-semiconductor-metal photodetectors IEICE TRANSACTIONS ON ELECTRONICS E86-C 11 2278-2282 2003/11
  •  Oxygen and sulfur adsorption effects on electronic states of GaAs(100) surfaces studied with discrete variational Xa method JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 42 12 7244-7249 2003/12
  •  GaAs- MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces IEEE TRANSACTIONS ON ELECTRON DEVICES 51 3 311-316 2004/03
  •  Highly accurate measurements of absolute distance over 100 m-range using a frequency-shifted feedback laser diode Conference on Lasers and Electro-Optics (CLEO 2002) 647 2002/05
  •  Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment 14th Indium Phosphide and Related Materials Conference 217-220 2002/05
  •  Effect of oxidation and/or nitridation of (100) n-GaAs surface 2002 Asia-Pacific Workshop on Foundamentals and Applications of Advanced Semicon 253-256 2002/07
  •  Enhancement and accumulation mode operation of GaAs MISFETs and InAlAs/InGaAs MISHEMTs with nm-thin gate oxide layers 2002 International Conference on Solid-State Devices and Materials 506-507 2002/09
  •  Metal induced gap state of Al/(100) InP systems studied with molecular orbital calculations Topical Workshop on Heterostructure Microelectronics 24-25 2003/01
  •  Oxygen and sulfur adsorption effects upon electronic states of GaAs (100) surfaces studied with Discrete Variational Xa method Topical Workshop on Heterostructure Microelectronics 30-31 2003/01
  •  Expermental study on InGaAs metal-semiconductor-metal photodetectors for long wavelength Topical Workshop on Heterostructure Microelectronics 84-85 2003/01
  •  One-dimensional equivalent circuit model of heterojunction metal-semiconductor-metal photodetector Topical Workshop on Heterostructure Microelectronics 86-87 2003/01
  •  Improved performance of nm-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs: GaAs-MISFET 2003 International Symposium on Compound Semiconductors 225-226 2003/08
  •  GaAs-MISFET with nm-thin gate insulating films formed by oxi-nitridation process 2003 International Conference on Solid State Devices and Materials 544-545 2003/09
  •  Extended-range high-resolution FMCW sensing system by means of frequency-multiplied reference beat signal 16th International Conference on Optical Fiber Sensors 352-355 2003/10
  •  Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation 2004 International Conference on Indium Phosphide and Related Materials 187-190 2004/06
  •  Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layer 2004 International Conference on Indium Phosphide and Related Materials 191-194 2004/06
  •  Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N dont 2004 International Conference on Indium Phosphide and Related Materials 171-174 2004/06
  •  N-channel, p-channel, enhancement, depletion GaAs metal-insulator-semiconductor field effect transistors with gate films formed by oxi-nitridation of GaAs surface Narayan Chandra Paul, Masahide Takebe, Mitoko Tametou, Hiroki Seto, Yuuki Fujino, Koichi Iiyama, Saburo Takamiya 2005 International Conference on Indium Phosphide and Related Materials 2005/05
  •  Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section Tae Woung Jeong, Koichi Iiyama, Saburo Takamiya 2005 International Conference on Indium Phosphide and Related Materials 2005/05
  •  Design of dispersion flattened photonic crystal fiber with a large core and a concentric missing ring Koichi Iiyama, Zennosuke Yamashita, Saburo Takamiya 4th Workshop on Fibers and Optical Passive Components 2005/06
  •  Studies of effects of adsorption of Silicon or Germanium on the electronic states of (100) GaAs surfaces Satoshi Miyamura, Hiroki Seto, Takao Inokuma, Koichi Iiyama, Saburo Takamiya JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 44 1A 12-16 2005/01
  •  Mechanical stress caused by adsorption of O and N on Ga-terminated (100) GaAs surface and InAl-terminated (100) InAlAs surfaces: Degradation of insulator/semiconductor interface Hiroki Seto, Satoshi Miyamura, Takao Inokuma, Koichi Iiyama, Saburo Takamiya JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 44 5A 2905-2912 2005/05
  •  Experimental study of lasing characteristics of Brillouin/erbium optical fiber laser Koichi Iiyama, Fumihiro Demura, Saburo Takamiya IEICE TRANSACTIONS ON ELECTRONICS E88C 6 1304-1309 2005/06
  •  n-channel p-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation J88C 7 551-559 2005/07
  •  GaAs metal insulator semiconductor field effect transistor with oxi-nitrided gate film formed by new process utilizing Al layer as resist film for selective etching, oxi-nitridation and lift-off Yuhki Fujino, Hiroki Seto, Masahide Takebe, Mitoko Tametou, Narayan Chandra Paul, Koichi Iiyama, Saburo Takamiya JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45 4A 2417-2421 2006/04
  •  Extended-range high-resolution FMCW reflectometry by means of electronically frequency-multiplied sampling signal generated from auxiliary interferometer Koichi Iiyama, Makoto Yasuda, Saburo Takamiya IEICE TRANSACTIONS ON ELECTRONICS E89C 6 823-829 2006/06
  •  Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors Hiroki Seto, Yuhki Fujino, Koichi Iiyama, Saburo Takamiya JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 45 6A 4915-4920 2006/06
  •  Fabrication of Si wire optical waveguides by clad formation by selective oxidation of Si Koichi Iiyama, Satoshi Asai, Masahiro Wakashima 12th Optoelectronics and Communications Conference/16th International Conference 2007/07
  •  Superconducting properties of heavily boron-doped diamond films fabricated by microwave plasma chemical vapor deposition with bias-enhanced nucleation 41. K. Yoshida, T. Kawae, S. Ishii, K. Iiyama, M. Kumeda, Y. Takano, A. Morimoto International Workshop on Superconductivity in Diamond and Related Materials 2008/07
  •  Fabrication of heavily boron-doped diamond films by microwave plasma chemical vapor deposition with bias-enhanced nucleation and their superconducting properties T. Kawae, K. Yoshida, S. Ishii, K. Iiyama, M. Kumeda, Y. Takano, A. Morimoto International Symposium on Superconductivity 2008/10
  •  Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18um CMOS Process K. Iiyama, N. Sannou, H. Takamatsu IEICE TRANSACTIONS ON ELECTRONICS E91-C 11  1820-1823 2008/11
  •  Mach-Zehnder interferometric optical switch using MEMS phase shifter M. Inamoto, T. Maruyama, K. Iiyama 9th International Conference on Numerical Simulation of Optoelectronic Devices 2009/09
  •  Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 um CMOS Process K. Iiyama, H. Takamatsu, T. Maruyama 35th European Conference on Optical Communication 2009/09
  •  Amorphous Polyethylene Terephthalate Optical Channel Waveguide K. Iiyama, Y. Ono, T. Maruyama, T. Yamagishi 2009 International Conference on Solid State Devices and Materials 2009/10
  •  Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 um Complementary Metal-Oxide-Semiconductor Process K. Iiyama, H. Takamatsu, T. Maruyama 2009 International Conference on Solid State Devices and Materials 2009/10
  •  Analysis of SOI-Based Optical Waveguide Switch with MEMS Evanescent Coupler Makoto Inamoto, Takeo Maruyama, and Koichi Iiyama 7th International Conference on Optics-photonics Design & Fabrication (ODF’10) 20PSa-71 2010/04
  •  Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18um CMOS proces Koichi Iiyama, Hideki Takamatsu, and Takeo Maruyama IEEE PHOTONICS TECHNOLOGY LETTERS 22 12 932-934 2010/06
  •  Propagation loss of amorphous silicon optical waveguides at the 0.8 um-wavelength range Takahiro Asukai, Makoto Inamoto, Takeo Maruyama, Koichi Iiyama 7th International Conference on Group IV Photonics P2.16 2010/09
  •  Fabrication and Characterization of Amorphous Polyethylene Terephthalate Optical Waveguides Koichi Iiyama, Terumasa Ishida, Yusuke Ono, Takeo Maruyama, and Tadaaki Yamagishi IEEE PHOTONICS TECHNOLOGY LETTERS 23 5 275-277 2011/03
  •  High Resolution FMCW Reflectometry Using a Single-mode Vertical Cavity Surface Emitting Laser Koichi Iiyama, Shin-ichiro Matsui, Takao Kobayashi, and Takeo Maruyama IEEE PHOTONICS TECHNOLOGY LETTERS 23 11 703-705 2011/06
  •  Low loss amorphous polyethylene terephthalate (PET) optical waveguides Koichi Iiyama, Terumasa Ishida, Kanae Sasaki, Hiromi Kitamura, and Takeo Maruyama 16th Opto-Electronics and Communications Conference 6E1-2 2011/07
  •  Frequency Response of Amorphous Silicon Photoconductors Hideyuki Otosaka, Shingo Ebuchi, Takeo Maruyama, Koichi Iiyama, Keisuke Ohdaira, and Hideki Matsumura 16th Opto-Electronics and Communications Conference 6D4-4 2011/07
  •  Active Layer Thickness Dependence of the Bandwidth of Amorphous Silicon Photoconductors Takeo Maruyama, Hideyuki Otosaka, and Koichi Iiyama 2011 International Conference on Solid State Devices and Materials P-7-27 2011/09
  •  GHz Response of Polycrystalline Silicon Photodiode Fabricated by Standard CMOS Process Takeo Maruyama, Hideyuki Otosaka, and Koichi Iiyama 1st International Symposium on Photonics and Electronics Convergence P-3 2011/11
  •  Characterization of APDs fabricated by 0.18 um CMOS process in blue wavelength region Toshiyuki Shimotori, Kazuaki Maekita, Takeo Maruyama, and Koichi Iiyama 17th Opto-Electronics and Communications Conference 5D1-3 2012/07
  •  GHz response of Si photodiodes fabricated with 0.35-um Si BiCMOS technology 9th International Conference on Group IV photonics ThP10 2012/08
  •  Ferroelectric Properties of PZT and PLZT Films on Si Substrate with ITO Buffer Layer Masaki Matsumoto, Shingo Ebuchi, Takeo Maruyama, and Koichi Iiyama 9th International Conference on Group IV photonics ThE4 2012/08
  •  Propagation of Lossy Wave in Si Slot Waveguide Hisayasu Morino, Takeo Maruyama, and Koichi Iiyama 9th International Conference on Group IV photonics ThE1 2012/08
  •  PZT Optical Waveguide on Silicon Substrate Takeo Maruyama, Shingo Ebuchi, Masaki Matsumoto, and Koichi Iiyama 2012 International Conference on Solid State Devices and Materials PS-7-25 2012/09
  •  High-speed Si CMOS APD by standard CMOS process Toshiyuki Shimotori, Kazuaki Maekita, Takeo Maruyama, and Koichi Iiyama 2nd International Symposium on Photonics and Electronics Convergence P-11 2012/12
  •  Metamorphic InAlAs MSM Photodetector on GaAs Substrate Kazuaki Maekita, Takeo Maruyama, and Koichi Iiyama The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies P1-37 2013/06
  •  Fabrication and Characterization of Amorphous Polyethylene Terephthalate Optical Waveguide The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies P1-12 2013/06
  •  GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding Kazuaki Maekita, Takeo Maruyama, and Koichi Iiyama 18th OptoElectronics and Communications Conference TuPM-2 2013/07
  •  Optimizing interdigital electrode spacing of CMOS APD for 10 Gb/s application Toshiyuki Shimotori, Kazuaki Maekita, Ryoichi Gyobu, Takeo Maruyama, and Koichi Iiyama 18th OptoElectronics and Communications Conference MM1-3 2013/07
  •  High-efficiency optical coupling to planar photodiode using metal reflector loaded waveguide grating coupler Gen Li, Yasunori Hashimoto, Takeo Maruyama, and Koichi Iiyama OPTICAL AND QUANTUM ELECTRONICS 45 7 657-663 2013/07
  •  Reduction of Wavelength Dependence of Coupling Characteristics using Si/SiO2 Optical Waveguide Bending Directional Coupler Hisayasu Morino, Takeo Maruyama, and Koichi Iiyama 18th OptoElectronics and Communications Conference WL4-4 2013/07
  •  Ta2O5 optical waveguide on silica substrate fabricated by CF4 reactive ion etching Gen Li, Yue.Zhao, Takeo Maruyama, and Koichi Iiyama International Conference on Solid State Devices and Materials PS-7-20 2013/09
  •  Sub-um electrode spacing SOI-PIN photodiode fabricated by CMOS compatible process Hiroya Mitsuno, Takeo Maruyama, Koichi Iiyama 21st Optoelectronics and Communication Conference (OECC 2016) 2016/07
  •  Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18 um CMOS Process for High-speed Operation Zul Atfyi Fauzan Mohammed Napiah, Ryoichi Gyobu, Takuya Hishiki, Takeo Maruyama, Koichi Iiyama IEICE Tranactions on Electronic 99-C 12 1304-1311 2016/12
  •  Linearizing optical frequency sweep of a DFB laser by modulation waveform optimization for high resolution FMCW sensing system Nor Azlinah M.L, Akihiro Igarashi, Nakamoto Atsushi, Takeo Maruyama, Koichi Iiyama International Journal of Electrical and Electronics Engineering Research 5 6 1-10 2015/12
  •  Linearization of nonlinear beat frequency in FMCW interferometry through waveform modifying technique Nor Azlinah Binti Md Lazam, Koichi Iiyama, Takeo Maruyama, Yosuke Kimura, Nguyen Van Tu ARPN Journal of Engineering and Applied Sciences 10 8 3817-3822 2015/05
  •  Over 10 GHz Lateral Silicon Photodetector Fabricated on Silicon-on-insulator Substrate by CMOS-compatible Process Gen Li, Takeo Maruyama, Koichi Iiyama Japanese Journal of Applied Physics 54 4S 04DG06 (4 pages) 2014/03
  •  Reduction of wavelength dependence of coupling characteristics using Si optical waveguide curved directional coupler Hisayasu Morino, Takeo Maruyama, Koichi Iiyama Journal of Lightwave Technology 21 12 2188-2192 2014/12
  •  Low-propagation-loss Ta2O5 optical waveguides on silica substrate Gen Li, Takeo Maruyama, Koichi Iiyama Japanese Journal of Applied Physics 53 4S 04EG12 (4 pages) 2014/03
  •  Linearization of nonlinear beat frequency in FMCW interferometry through waveform modifying technique Nor Azlinah Binti Md Lasam, Koichi Iiyama, Takeo Maruyama, Yosuke Kimura, Ngyuen Van Tu 2014 2nd International Conference on Electronic Design (ICED 2014) 2014/08
  •  Structure Dependence of over 10 GHz Lateral Si-PIN Photodiode Fabricated by CMOS Compatible Process Gen Li, Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama 2014 International Conference on Solid State Devices and Materials (SSDM 2014) 2014/09
  •  Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation Zul Atfyi Fauzan M. Napia, Koichi Iiyama, Ryoichi Gyobu, Takuya Hishiki, Takeo Maruyama 1st International Conference on Telematics and Future Generation Networks (TAFGEN 2015) 2015/05
  •  High speed operation of SOI pin photodiodes fabricate by CMOS compatible process Takeo Maruyama, Kazuaki Maekita, Gen Li, Koichi Iiyama 19th OptoElectronics and Communications Conference (OECC 2014) 2014/07
  •  Linearizing optical frequency sweep of a DFB laser by modulation waveform optimization for high resolution FMCW sensing system Nor Azlinah Bint Md Lazam, Akihiro Igarashi, Atsushi Nakamoto, Takeo Maruyama, Koichi Iiyama International Symposium on Engineering and Applied Science (ISEAS) 2015/09
  •  10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 um CMOS process Koichi Iiyama, Toshiyuki Shimotori, Ryoichi Gyobu, Takuya Hishiki, Takeo Maruyama 19th OptoElectronics and Communications Conference (OECC 2014) 2014/07
  •  Reduction of wavelength dependence of coupling characteristics using Si/SiO2 optical waveguide curved directional coupler Takeo Maruyama, Hisayasu Morino, Koichi Iiyama 3rd International Symposium on Photonics and Electronics Convergence (ISPEC 2013) 2013/11
  •  Three-dimentional object profiling using FMCW optical sensing system Koichi Iiyama, Tatsuya Washizuka, Yosuke Kimura International Symposium on Optical Memory 2016 (ISOM’16) 2016/10
  •  Wavelength Dependent Photodetection Characteristics of Avalanche Photodiode Fabricated by Standard CMOS Process Zul Atfyi Fauzan Mohammed Napiah, Takuya Hishiki, Koichi Iiyama 2016 International Conference on Solid State Devices and Materials (SSDM 2016) 2016/09
  •  Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process Zul Atfyi Fauzan Mohammed Napiah, Takuya Hishiki, Koichi Iiyama Optics & Laser Technology 92 193-197 2017/07/01

Conference Presentations

Arts and Fieldwork

Patent

Theme to the desired joint research

○A study on optical interference and optical fiber sensing systems
○A study on high-speed photodetectors

Grant-in-Aid for Scientific Research

○「光周波数掃引法による光回路素子の非破壊的内部診断・特性評価システムの構築」(1996-1997) 
○「レーザ光の光周波数掃引法による高精度で非接触な物体形状計測システムの開発」(2012-2014) 
○「シリコンの選択酸化による細線光導波路の作製に関する研究」(2005-2006) 

Classes (Bachelors)

○Electronic Circuit Analysis I and Exercise(2017)
○Electrical and Electronic Engineering Laboratory II(2017)
○Electrical and Electronic Engineering Laboratory I(2017)
○Transmission Circuits(2017)
○Transmission Circuits(2016)
○Research Project(2016)
○Electrical and Electronic Engineering Laboratory I(2016)
○Research Project(2016)
○Research Project(2016)
○Electronic Circuit Analysis I and Exercise(2016)
○Electronic Circuit Analysis II and Exercise(2016)
○Electrical and Electronic Engineering Laboratory II(2016)

Classes (Graduate Schools)

○Optical Sensing(2017)
○Creative Research 1(2017)
○Creative Research 2(2017)
○Lightwave Engineering A(2017)
○Optical Sensing(2017)
○Optical Sensing(2017)
○Optical Sensing(2017)
○Introduction to Electrical Engineering and Computer Science(2016)
○Lightwave Engineering A(2016)
○Creative Research 2(2016)
○Creative Research 1(2016)
○Optical Sensing(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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