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Researcher Information

last modified：2024/11/22

Professor　TOKUDA Norio

Mail Laboratory Website

Faculty, Affiliation

Nanomaterials Research Institute

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Course in Electrical and Electronic Engineering, School of Electrical, Information and Communication Engineering, College of Science and Engineering

Laboratory

Academic Background

【Academic background(Doctoral/Master's Degree)】
University of Tsukuba　Master　Graduate School, Division of Science and Engineering　200203　Completed
University of Tsukuba　Doctor　Pure and Applied Sciences　200503　Completed
【Academic background(Bachelor's Degree)】
University of Tsukuba　200003
【Degree】
Doctor of Philosophy in Engineering

Career

National Institute of Advanced Industrial Science and Technology (AIST)　AIST Research Fellow (post-doc.)(2005/04/01-2009/03/31)
Kanazawa University　Institute of Science and Engineering　Assistant Professor(2009/04/01-2011/08/31)
Kanazawa University　Institute of Science and Engineering　Associate Professor(2011/09/01-2018/11/30)
National Institute of Advanced Industrial Science and Technology　Cross-appointment fellow(2018/04/01-2020/03/31)
Kanazawa University　Nanomaterials Research Institute　Professor(2018/12/01-)
Kyoto University　Visiting Professor(2020/04/01-2021/03/31)

Year & Month of Birth

1976/06

Academic Society

The Japan Society of Applied Physics
The Surface Science Society of Japan
Society of Nano Science and Technology
Japanese Association for Crystal Growth
The Surface Finishing Society of Japan
Japan New Diamond Forum

Award

○President Award(2005/03)
○Dean Award(2005/03)
○20th Diamond Symposium Poster Session Award(2006/11)
○Incentive Award for Excellent Presentation(2007/03)
○Young Best Presenter Award (Society of Nano Science and Technology)(2007/05/22)
○Incentive Award for Excellent Presentation(2008/11)
○The 11th excellent presentation award from the surface finishing society of Japan(2010/03/16)
○The 76th JSAP Autumn Meeting, 2015 Poster Award(2015/10/01)
○The 76th JSAP Autumn Meeting, 2015 Poster Award(2015/10/01)
○The 76th JSAP Autumn Meeting, 2015 Poster Award(2015/10/01)

Specialities

Inorganic materials/Physical properties

Speciality Keywords

semiconductor, surface science, diamond, graphene

Research Themes

Low dimensional nano-structures of silicon and carbon materials

Low dimensional nano-structures of silicon and carbon materials Our objective is a creation of a novel nano-electronics using quantum-mechanical effects. So, we study on fabricating mesoscopic structures using silicon and carbon materials.

Crystal growth, and control of doping and surface of diamond

Crystal growth, and control of doping and surface of diamond We study on diamond homoepitaxy, doping, and surface control using microwave plasma-enhanced chemical vapor deposition.

Books

  • 　Yang, Nianjun (Ed.) (Chapter 1) Tokuda, Norio　Novel Aspects of Diamond　Springer International Publishing　2014/11

Papers

  • 　Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth　Norio Tokuda, Toshiharu Makino, Takao Inokuma, and Satoshi Yamasaki　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　51　090107　2012
  • 　Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface　Norio Tokuda, Hitoshi Umezawa, Hiromitsu Kato, Masahiko Ogura, Satoshi Gonda, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　Appl. Phys. Express　2　5　055001　2009/04
  • 　Flattening of oxidized diamond (111) surfaces with H2SO4/H2O2 solutions　Norio Tokuda, Daisuke Takeuchi, Sung-Gi Ri, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　18　2-3　213-215　2009/02
  • 　Atomically flat diamond (111) surface formation by homoepitaxial lateral growth　Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Masahiko Ogura, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　17　7-10　1051-1054　2008/07
  • 　Roughening of atomically flat diamond (111) surface by a hot HNO3/H2SO4 solution　Norio Tokuda, Hitoshi Umezawa, Sung-Gi Ri, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　17　4-5　486-488　2008/04

show all

  • 　Hillock-Free Heavily Boron-doped Homoepitaxial Diamond Films on Misoriented (001) Substrates　Norio Tokuda, Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　46　4A　1469-1470　2007/04
  • 　The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - Study of surface morphology　Norio Tokuda, Takeyasu Saito, Hitoshi Umezawa, Hideyo Okushi, and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　16　2　409-411　2007/02
  • 　Selective Growth of Ag Nanowires on Si(111) Surfaces by Electroless Deposition　Norio Tokuda, Naoyuki Sasaki, Hidenobu, Watanabe, Kazushi Miki, Satoshi Yamasaki, Ryu Hasunuma and Kikuo Yamabe　JOURNAL OF PHYSICAL CHEMISTRY B　109　26　12655-12657　2005/07
  • 　Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water　Norio Tokuda, Masayasu Nishizawa, Satoshi Yamasaki, Kazushi Miki, Ryu Hasunuma and Kikuo Yamabe　Jpn. J. Appl. Phys.　44　19　L612-L615　2005/04
  • 　Fabrication of Cu Nanowires along Atomic Step Edge Lines on Si(111) Substrates　Norio Tokuda, Hidenobu Watanabe, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe　APPLIED SURFACE SCIENCE　237　1-4　528-531　2004/10
  • 　Leakage Current Distribution and Dielectric Breakdown of Cu-Contaminated Thin SiO2　Norio Tokuda, Shingo Nishiguchi, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe　JOURNAL OF THE ELECTROCHEMICAL SOCIETY　151　4　F81-F86　2004/04
  • 　Local Dielectric Degradation of Cu-Contaminated SiO2 Thin Films　Norio Tokuda, Shingo Nishiguchi, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe　SOLID STATE PHENOMENA　95-96　641-646　2004
  • 　Selective Growth of Cu Nanowires on Si(111) Substrates　Norio Tokuda, Daisuke Hojo, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe　Jpn. J. Appl. Phys.　42　2B　L1210-L1212　2003/10
  • 　Leakage Current Distribution of Cu-Contaminated Thin SiO2　Norio Tokuda, Takahiro Kanda, Satoshi Yamasaki, Kazushi Miki and Kikuo Yamabe　Jpn. J. Appl. Phys.　42　2B　L160-L162　2003/02
  • 　SiO2 Surface and SiO2/Si Interface Topography Change by Thermal Oxidation　Norio Tokuda, Masahide Murata, Daisuke Hojo and Kikuo Yamabe　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　40　8　4763-4768　2001/08
  • 　Diamond Schottky-pn diode with high forward current density and fast switching operation　Toshiharu Makino, Satoshi Tanimoto, Yusuke Hayashi, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Hiromichi Ohashi, Hideyo Okushi, and Satoshi Yamasaki　APPLIED PHYSICS LETTERS　94　26　262101　2009/06
  • 　Diamond nanowires, a new approach towards next generation electrochemical gene sensor platforms　C. E. Nebel, N. Yang, H. Uetsuka, E. Osawa, N. Tokuda, O. Williams　DIAMOND AND RELATED MATERIALS　18　5-8　910-917　2009/05
  • 　Characterization of specific contact resistance on heavily phosphorus-doped diamond films　Hiromitsu Kato, Daisuke Takeuchi, Norio Tokuda, Hitoshi Umezawa, Hideyo Okushi, Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　18　5-8　782-785　2009/05
  • 　Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p-i-n junctions　Toshiharu Makino, Sung-Gi Ri, Norio Tokuda, Hiromitsu Kato, Satoshi Yamasaki, Hideyo Okushi　DIAMOND AND RELATED MATERIALS　18　5-8　764-767　2009/05
  • 　Selective Growth of Buried n+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film　Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki　Appl. Phys. Express　2　5　055502　2009/04
  • 　High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers　Kazuihiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Masahiko Ogura, Toshiharu Makino, Daisuke Takeuchi, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki　APPLIED PHYSICS LETTERS　94　15　152109　2009/04
  • 　Recovery of negative electron affinity by annealing on (111) oxidized diamond surfaces　Daisuke Takeuchi, Sung-Gi Ri, Norio Tokuda, Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　18　2-3　206-209　2009/02
  • 　Doping-induced changes in the valence band edge structure of homoepitaxial B-doped diamond films below Mott's critical density　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　206　1991-1995　2009/09
  • 　Vertically aligned diamond nanowires: Fabrication, characterization, and application for DNA sensing　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　206　2048-2056　2009/09
  • 　Diamond Schottky-pn diode with high forward current density　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　206　2086-2090　2009/09
  • 　Low specific contact resistance of heavily phosphorus-doped diamond film　Hiromitsu Kato, Hitoshi Umezawa, Norio Tokuda, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki　APPLIED PHYSICS LETTERS　93　9　202103　2008/11
  • 　Electrical and light-emitting properties of homoepitaxial diamond p-i-n junction　Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Shokichi Kanno, Satoshi Yamasaki, and Hideyo Okushi　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　205　9　2200-2206　2008/08
  • 　Electrical activity of doped phosphorus atoms in (001) n-type diamond　Hiromitsu Kato, Daisuke Takeuchi, Norio Tokuda, Hitoshi Umezawa, Satoshi Yamasaki, and Hideyo Okushi　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　205　9　2195-2199　2008/08
  • 　Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments　Sung-Gi Ri, Daisuke Takeuchi, Norio Tokuda, Hideyo Okushi, Satoshi Yamasaki　APPLIED PHYSICS LETTERS　92　 112112　2008/03
  • 　Mapping of extended defects in B-doped (001) homoepitaxial diamond films by electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique　Sung-Gi Ri, Xiao Li Yuan, Takashi Sekiguchi, Norio Tokuda, Masahiko Ogura, Hideyo Okushi and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　17　4-5　489-493　2008/04
  • 　Photoelectron emission from heavily B-doped homoepitaxial diamond films　Daisuke Takeuchi, Norio Tokuda, Masahiko Ogura, and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　17　4-5　813-816　2008/04
  • 　Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity　Daisuke Takeuchi, Toshiharu Makino, Sung-Gi Ri, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyo Okushi, and Satoshi Yamasaki　Applied Physics Express　1　1　015004　2008/01
  • 　Direct observation of two-dimensional growth at SiO2/Si(111) interface　Daisuke Hojo, Norio Tokuda, Kikuo Yamabe　THIN SOLID FILMS　515　20-21　7892-7898　2007/08
  • 　Inhomogeneous DNA bonding to polycrystalline CVD diamond　C. E. Nebel, H. Uetsuka, B. Rezek, D. Shin, N. Tokuda, and T. Nakamura　DIAMOND AND RELATED MATERIALS　16　8　1648-4651　2007/08
  • 　Diamond and biology　Christoph E. Nebel, Dongchan Shin, Bohuslav Rezek, Norio Tokuda, Hiroshi Uetsuka and Hideyuki Watanabe　Journal of the Royal Society Interface　4　14　439-461　2007/06
  • 　Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p-i-n junction　Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki and Hideyo Okushi　DIAMOND AND RELATED MATERIALS　16　4-7　1025-1028　2007/04
  • 　Cycle of two-step etching process using ICP for diamond MEMS applications　Takatoshi Yamada, Hiromichi Yoshikawa, Hiroshi Uetsuka, Somu Kumaragurubaran, Norio Tokuda, Shin-ichi Shikata　DIAMOND AND RELATED MATERIALS　16　4-7　996-999　2007/04
  • 　Surface electronic properties on boron doped (111) CVD homoepitaxial diamond films after oxidation treatments　Sung-Gi Ri, Daisuke Takeuchi, Christoph E. Nebel, Norio Tokuda, Yuichi Yamazaki, Satoshi Yamasaki and Hideyo Okushi　DIAMOND AND RELATED MATERIALS　16　4-7　831-835　2007/04
  • 　Electrochemical grafting of boron-doped single-crystalline CVD-Diamond with nitrophenyl molecules　Hiroshi Uetsuka, Dongchan Shin, Norio Tokuda, Kazuhiko Saeki, and Nebel Erwin Christoph　LANGMUIR　23　6　3466-3472　2007/03
  • 　Leakage current analysis of diamond Schottky barrier diode　Hitoshi Umezawa, Takeyasu Saito, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri, Hiromichi Yoshikawa, Shin-ich Shikata　APPLIED PHYSICS LETTERS　90　073506　2007/02
  • 　Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling　Hitoshi Umezawa, Norio Tokuda, Masahiko Ogura, Sung-Gi Ri and Shin-ichi Shikata　DIAMOND AND RELATED MATERIALS　15　11-12　1949-1953　2006/11
  • 　Energetics of dopant atoms in subsurface positions of diamond semiconductor　Takehide Miyazaki, Hiromitsu Kato, Sung-Gi Ri, Masahiko Ogura, Norio Tokuda, and Satoshi Yamasaki　SUPERLATTICES AND MICROSTRUCTURES　40　4-6　574-579　2006/10
  • 　Photo-and electrochemical bonding of DNA to single crystalline CVD diamond　D. Shin, B. Rezek, N. Tokuda, D. Takeuchi, H. Watanabe, T. Nakamura, T. Yamamoto, and C. E. Nebel　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　203　13　3245-3272　2006/10
  • 　High-efficiency Excitonic Emission with Deep-ultraviolet Light from (001)-oriented Diamond p-i-n Junction　Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki, Hideyo Okushi　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　45　39　L1042-L1044　2006/10
  • 　Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA sensing　Dongchan Shin, Norio Tokuda, Bohuslav Rezek, Christoph E. Nebel　ELECTROCHEMISTRY COMMUNICATIONS　8　5　844-850　2006/05
  • 　Surface conductive layers on (111) diamonds after oxygen treatments　Sung-Gi Ri, Christoph E. Nebel, Daisuke Takeuchi, Bohuslav Rezek, Norio Tokuda, Satoshi Yamasaki and Hideyo Okushi　DIAMOND AND RELATED MATERIALS　15　4-8　692-697　2006/04
  • 　Utilization of Si atomic steps for Cu nanowire fabrication　Ryu Hasunuma, Takanobu Yada, Junichi Okamoto, Daisuke Hojo, Norio Tokuda and Kikuo Yamabe　Science and Technology of Advanced Materials　6　667-670　2005/09
  • 　Nonuniformity in Ultrathin SiO2 on Si(111) Characterized by Conductive Atomic Force Microscopy　Ryu Hasunuma, Junichi Okamoto, Norio Tokuda and Kikuo Yamabe　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　43　11B　7861-7865　2004/11
  • 　Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface　Daisuke Hojo, Norio Tokuda and Kikuo Yamabe　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　42　5B　L561-L563　2003/05
  • 　Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces　Daisuke Hojo, Hitoshi Oeda, Norio Tokuda and Kikuo Yamabe　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　42　4B　1903-1906　2003/04
  • 　Leakage current distribution in ultrathin oxide on silicone surface with step/terrace structures　Masahide Murata, Norio Tokuda, Daisuke Hojo and Kikuo Yamabe　THIN SOLID FILMS　414　1　56-62　2002/07
  • 　Atomic Topography Change of SiO2/Si Interfaces during Thermal Oxidation　Daisuke Hojo, Norio Tokuda and Kikuo Yamabe　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　41　5A　L505-L508　2002/05
  • 　Growth of atomically step-free surface on diamond {111} mesas　Hitoshi Umezawa, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　DIAMOND AND RELATED MATERIALS　19　4　288-290　2010/04
  • 　Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films　Tokuda, N. , Ogura, M., Matsumoto, T., Yamasaki, S., Inokuma, T.　Physica Status Solidi (A) Applications and Materials Science　213　2051　2016
  • 　Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel　Kazuhiro Nakanishi, Hiroki Kuroshima, Tsubasa Matsumoto, Takao Inokuma, Norio Tokuda　Diamond Relat. Mater. 　68　127　2016
  • 　Time-resolved cyclotron resonance on dislocation-free HPHT diamond　I. Akimoto, N. Naka, N. Tokuda　Diamond Relat. Mater.　63　38　2016
  • 　Perfect selective alignment of nitrogen-vacancy centers in diamond　Takahiro Fukui, Yuki Doi, Takehide Miyazaki, Yoshiyuki Miyamoto, Hiromitsu Kato, Tsubasa Matsumoto, Toshiharu Makino, Satoshi Yamasaki, Ryusuke Morimoto, Norio Tokuda, Mutsuko Hatano, Yuki Sakagawa, Hiroki Morishita, Toshiyuki Tashima, Shinji Miwa, Yoshishige Suzuki and Norikazu Mizuochi　Appl. Phys. Express　7　055201　2014
  • 　Density functional studies of surface potentials for hydrogen and oxygen atoms on diamond (111) surfaces　Samar Moustafa, Norio Tokuda, and Takao Inokuma　Jpn. J. Appl. Phys.　53　02BD01　2014
  • 　Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition　Norio Tokuda, Masahiko Ogura, Satoshi Yamsaki, and Takao Inokuma　Jpn. J. Appl. Phys. 　53　04EH04　2014
  • 　Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface　Norio Tokuda, Makoto Fukui, Toshiharu Makino, Daisuke Takeuchi, Satoshi Yamsaki, and Takao Inokuma　Jpn. J. Appl. Phys.　2013
  • 　Fractional Surface Termination of Diamond by Electrochemical Oxidation　René Hoffmann, Harald Obloh, Norio Tokuda, Nianjun Yang, Christoph E. Nebel　LANGMUIR　28　47　2012
  • 　The creation of a biomimetic interface between boron-doped diamond and immobilized proteins　René Hoffmann, Armin Kriele, Harald Obloh, Norio Tokuda, Waldemar Smirnov, Nianjun Yang, Christoph E. Nebel　BIOMATERIALS　32　7325
  • 　Electron emission from CVD diamond p–i–n junctions with negative electron affinity during room temperature operation　D. Takeuchi, T. Makino, H. Kato, M. Ogura, N. Tokuda, K. Oyama, T. Matsumoto, H. Okushi, and S. Yamasaki　DIAMOND AND RELATED MATERIALS　20　917
  • 　Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure　Takeshi Kawae, Yuji Hori, Takashi Nakajima, Hiroki Kawasaki, Norio Tokuda, Soichiro Okamura, Yoshiko Takano, and Akiharu Morimoto　ELECTROCHEMICAL AND SOLID STATE LETTERS　14　G31
  • 　Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers　Kazuihiro Oyama, Sung-Gi Ri, Hiromitsu Kato, Daisuke Takeuchi, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Hideyo Okushi, and Satoshi Yamasaki　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　208　937
  • 　Effects of high-temperature annealing on electron spin resonance in SiOx films prepared by R. F. sputtering system　A.M.A. Shamekh, N. Tokuda, T. Inokuma　JOURNAL OF NON-CRYSTALLINE SOLIDS　357　981
  • 　Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering　A.M.A. Shamekh, N. Tokuda, T. Inokuma　JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV　50　01BF04
  • 　Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage　Toshiharu Makino, Hiromitsu Kato, Norio Tokuda, Masahiko Ogura, Daisuke Takeuchi, Kazuhiro Oyama, Satoshi Tanimoto, Hideyo Okushi, and Satoshi Yamasaki　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　207　2105
  • 　Improvement of (001)-oriented diamond p-i-n diode by use of selective grown n+ layer　Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Daisuke Takeuchi, Hideyo Okushi, and Satoshi Yamasaki　PHYSICA STATUS SOLIDI A-APPLIED RESEARCH　207　2099
  • 　Electron Emission from a Diamond (111) p–i–n+ Junction Diode with Negative Electron Affinity during Room Temperature Operation　Daisuke Takeuchi, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Norio Tokuda, Kazuhiro Oyama, Tsubasa Matsumoto, Izumi Hirabayashi, Hideyo Okushi, and Satoshi Yamasaki　Applied Physics Express　3　041301　2010/03

Conference Presentations

  • A Study of Semiconducting Diamond toward Realization of Innovative Power Devices(2016/07)

Others

  • 　Surface roughening of diamond(001) films during homoepitaxial growth in heavy boron doping　Norio Tokuda, Hitoshi Umezawa, Takeyasu Saito, Kikuo Yamabe, Hideyo Okushi, and Satoshi Yamasaki　16　2　409-411　2007/04

Arts and Fieldwork

Patent

Theme to the desired joint research

Grant-in-Aid for Scientific Research

○「原子的に平坦なダイヤモンド（１１１）表面の大面積形成及びその機能の創出」(2008-2009)　
○「超低損失ダイヤモンドパワーデバイス開発のための基盤研究」(2012-2014)
○「インチスケールダイヤモンドウェハ開発のための基盤研究」(2014-2016)
○「低損失縦型ダイヤモンドパワーMOSFET」(2017-2019)　
○「ダイヤモンドを用いた革新的アンモニア合成法の開発」(2017-2019)　
○2020「ダイヤモンド表面核スピン格子を用いた室温量子シミュレータの基盤構築」(2018-2020)　

Competitive research funding,Contribution

Collaborative research,Consignment study

Classes (Bachelors)

○Introduction to Region-studies(2017)
○Student-Initiated Project(2017)
○Electrical and Electronic Engineering Laboratory II(2017)
○Semiconductor Engineering(2017)
○Electrical and Electronic Engineering Laboratory I(2017)
○Student-Initiated Project(2016)
○Electrical and Electronic Engineering Laboratory I(2016)
○Electrical and Electronic Engineering Laboratory II(2016)
○Semiconductor Engineering(2016)

Classes (Graduate Schools)

○Surface and Interface Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2017)
○Surface Control Engineering(2017)
○Surface and Interface Engineering(2016)
○Surface Control Engineering(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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