Associate Professor KAWAE Takeshi
Faculty, Affiliation
Faculty of Electrical, Information and Communication Engineering,Institute of Science and Engineering
College and School Educational Field
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Course in Electrical and Electronic Engineering, School of Electrical, Information and Communication Engineering, College of Science and Engineering
Laboratory
TEL:076-234-4881 FAX:076-234-4870
Academic Background
【Academic background(Doctoral/Master's Degree)】
Tohoku University Doctor Graduate School, Division of Engineering 200303 Completed
Career
Institute of Fluid Science(2003/04/01-2004/03/31)
(2004/04/01-2005/03/30)
Year & Month of Birth
1975/03
Academic Society
Award
○10th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity Youngt Scientsit Award(2010/07/02)
○46th japan electromaterials society conference best presentation award(2009/11/20)
Specialities
Electronic materials/Electric materials
Speciality Keywords
functional oxide materials
Research Themes
fabrication of dielectric and ferroelectric thin films
fabrication of diamond films and its device applications
highTc superconductor devices
Books
- Influences of Pr and Mn co-substitution on crystallinity and electric properties of BiFeO3 thin films Ceramics Society of Japan 118 652 2010/07
Papers
- Charging effect characteristic in one-dimensional array on Bi2Sr2CaCu2O8+d intrinsic Josephson junctions JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 44 24 L766-L769 2005/06
- Influence of charging energy on Cooper-pair tunneling in Bi-2212 small intrinsic Josephson junctions IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 13 2 897-900 2003/08
- Junction area dependence of critical current density in Bi-2212 stacked junction SUPERCONDUCTOR SCIENCE & TECHNOLOGY 14 1102-1105 2001/10
- Sub-micron sized intrinsic Josephson junctions in YBa2Cu3O7-x whiskers SUPERCONDUCTOR SCIENCE & TECHNOLOGY 18 pp1159-1162 2005/07
- Fabrication of BiFeO3 Thick Films by a Simple Liquid-Phase Epitaxial Growth Technique T. Kawae, H. Tsuda, M. Shiomoto, S. Yamada, M. Nagao, A. Morimoto and M. Kumeda JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47 237-239 2008/01
- Reduced leakage current and ferroelectric properties in Nd and Mn codoped BiFeO3 thin films T. Kawae, H. Tsuda, and A. Morimoto Applied Physics Express 2008/04
- Improved leakage and ferroelectric properties of Mn and Ti codoped BiFeO3 thin films 94 112904 2009/03
- Hysteresis behavior of capacitance-voltage curve in (Ba0.6Sr0.4)TiO3 thick films caused by strained hetero-structure 2009/09
- Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn co-substitution and their ferroelectric properties 2008/09
- Structure and Electrical Properties of (Pr, Mn)-codoped BiFeO3/B-doped Diamond Layered Structure 2011/03
- Influence of precursor concentration and growth time on the surface morphology and crystallinity of a-Ga2O3 thin films fabricated by mist chemical vapor deposition Y. Nakabayashi, S. Yamada, S. Ito, and T. Kawae Journal of the Ceramic Society of Japan 126 11 925 2018
- Influence of rapid thermal annealing at varied temperatures on conductivity activation energy and structural properties of Si-doped β-Ga2O3 film grown by pulsed laser deposition I. D. Antoro, S. Itoh, S. Yamada, and T. Kawae Ceramics International 45 1 747 2019
- Dependence of electric properties of BiFeO3 ultra thin film capacitors on thickness of SrRuO3 bottom electrode Y. Tsukada, Y. Terauchi, T. Nakajima, Y. Nomura, S. Okamura, and A. Morimoto JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 2011/09
- Hysteresis loops of polarization and magnetization in BiNd0.05Fe0.97Mn0.03O3/Pt/CoFe2O4 layered epitaxial thin film grown by pulsed laser deposition J. Hu, H. Naganuma, T. Nakajima, Y. Terauchi, S. Okamura, and A. Morimoto THIN SOLID FILMS 519 7727 2011/05
Conference Presentations
Others
Arts and Fieldwork
Patent
Theme to the desired joint research
Grant-in-Aid for Scientific Research
○「強誘電体の巨大分極を利用した超低損失ダイヤモンドパワーFETの創出」(2017-2019)
○「巨大残留分極を用いたカーボン系材料の表面キャリア制御」(2012-2013)
○「極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発」(2009-)
○「高濃度ボロン添加ダイヤモンド超伝導体薄膜を用いたジョセフソンデバイスの開発」(2007-)
○2022「宇宙空間・廃炉現場での動作を可能とする超低損失パワーＦＥＴの創出」(2020-2022)
○「強誘電体の巨大分極を利用した超低損失ダイヤモンドパワーFETの創出」(2017-2019)
Competitive research funding,Contribution
Collaborative research,Consignment study
Classes (Bachelors)
○Fundamental Chemistry 1(2020)
○Fundamental Chemistry 1(2020)
○Fundamental Chemistry 1(2020)
○Fundamental Chemistry 1A(2020)
○Fundamental Chemistry 1A(2020)
○Fundamental Chemistry 1A(2020)
○Materials for Electronics A(2020)
○Electrical and Electronic Engineering Laboratory III(2020)
○Materials for Electronics B(2020)
○Experiments in Fundamental Physics(2020)
○Presentation and Debate (Freshman Seminar II)(2020)
○Materials for Electronics B(2018)
○Materials for Electronics A(2018)
○Electrical and Electronic Engineering Laboratory III(2018)
○Experiments in Fundamental Physics(2018)
○Presentation and Debate (Freshman Seminar II)(2017)
○Electrical and Electronic Engineering Laboratory III(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Materials for Electronics(2017)
○Freshman Seminar I(2017)
○Experiments in Fundamental Physics(2017)
○Freshman Seminar I(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Freshman Seminar I(2016)
○Freshman Seminar I(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Experiments in Fundamental Physics(2016)
○Electrical and Electronic Engineering Laboratory III(2016)
○Materials for Electronics(2016)
○Materials for Electronics(2016)
Classes (Graduate Schools)
○Devices Process Engineering A(2020)
○Devices Process Engineering B(2020)
○Devices Process Engineering b(2020)
○Devices Process Engineering a(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Oxide Device Processing(2020)
○Fostering the independence of researchers(2020)
○Oxide Device Processing(2018)
○Devices Process Engineering(2018)
○Devices Process Engineering(2018)
○Oxide Device Processing(2017)
○Oxide Device Processing(2017)
○Oxide Device Processing(2017)
○Oxide Device Processing(2017)
○Devices Process Engineering(2017)
○Devices Process Engineering(2016)
○Oxide Device Processing(2016)