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Researcher Information

last modified:2017/05/23

Professor INOKUMA, Takao

Mail

Faculty, Affiliation

Faculty of Electrical and Computer Engineering, Institute of Science and Engineering

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
School of Electrical and Computer Engineering, College of Science and Engineering

Laboratory

Laboratory of Thin Film Electronics TEL:076-234-4882 FAX:076-234-4870

Academic Background

【Academic background(Doctoral/Master's Degree)】
University of Tsukuba Doctor 199103 Completed
【Academic background(Bachelor's Degree)】
University of Tsukuba 198603
【Degree】
Doctor of Engineering

Career

Kanazawa University Faculty of Engineering(1991/04/01-1992/03/31)
Kanazawa University Garduate School of Natural Sci. & Tech.(1992/04/01-1995/03/31)
Kanazawa University Faculty of Engineering(1995/04/01-1996/09/30)
Kanazawa University Faculty of Engineering(1996/10/01-1999/03/31)
Kanazawa University Faculty of Engineering(1999/04/01-2001/03/31)
Kanazawa University Garduate School of Natural Sci. & Tech.(2001/04/01-)

Year & Month of Birth

1964/03

Academic Society



Society of Computer Chemistry, Japan
Materials Research Society

Award

Materials Research Society

Specialities

Electronic materials/Electric materials、Electron device/Electronic equipment

Speciality Keywords

semiconductor, thin film materials, nanostructure

Research Themes

Characterization and application of semiconductor nanostructures

Books

  •  Thin Films Handbook Ohm, co. 2008/03
  •  T. Funada, T. Inokuma, et al. Basic Information Processing by Windows 2007/04
  •  T. Funada, T. Inokuma, et al. Basic Information Processing by Windows Vista 2008/04

Papers

  •  A comparable study of the photoluminescence properties of a-SiOx film and slicon nanocrystallites JOURNAL OF NON-CRYSTALLINE SOLIDS 266-269 1029-1032 2000/03
  •  A preliminary study of MIS diodes with nm-thin GaAs-oxide layers SOLID-STATE ELECTRONICS 43 8 1571-1576 1999/08
  •  Cathodoluminescence Properties of Silicon Nanocrystallites Embedded in Silicon Oxide Thin Films Journal of Luminescense 80 247-251 1999/02
  •  Dielectric properties of fluorinated silicon dioxide films JOURNAL OF NON-CRYSTALLINE SOLIDS 240 154-165 1998/10
  •  Effects of Addition of SiF4 During Growth of Nanocrystalline Silicon Films Deposited at 100 degree C by Plasma-Enhanced Chemical Vapor Deposition Japanese Journal of Applied Physics 38 10 6047-6053 1999/10

show all

  •  Effects of Addition of SiF4 to the SiH4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature. Japanese Journal of Applied Physics 36 11 1997/11
  •  Effects of Nitrogen Addition to Fluorinated Silicon Dioxide Films Japanese Journal of Applied Physics 37 9A 4904-4909 1998/09
  •  Effects of plasma-pretreatment on substrates before deposition of polycrystalline silicon films Japanese Journal of Applied Physics 41 1 263-269 2002/01
  •  Influence of organic contamination on silicon dioxide integrity Japanese Journal of Applied Physics 39 5A 2497-2502 2000/05
  •  Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments Japanese Journal of Applied Physics 37 9A 4711-4717 1998/09
  •  Luminescence properties of nanocrystalline silicon films Material Science and Engineering C15 125-128 2001
  •  Nanoscale Structural Investigation of Si Crystallites Grown from Si Suboxide Films by Thermal Annealing JOURNAL OF CRYSTAL GROWTH 138 124-130 1998/04
  •  Optical Properties of Si Clusters and Si Nanocrystallites in High-Temperature Annealed SiOx Films JOURNAL OF APPLIED PHYSICS 83 4 2228-2234 1998/04
  •  Optical Properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition THIN SOLID FILMS 382 47-55 2001
  •  Relationship between structural and optical properties in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition Journal of Electrochemical Society 145 10 3615-3620 1998/10
  •  Si nanocrystal growth in SiO2 matrix through solid-state reaction Recent Research and Development in Crystal Growth 1 83-101 1999/08
  •  Stability of the Dielectric Properties of PECVD Deposited Carbon-Doped SiOF Films THIN SOLID FILMS 337 67-70 1999/01
  •  Structural and optical properties of nanocrystalline silicon films deposited by plasma-enhanced chemical vapor deposition Japanese Journal of Applied Physics 41 1 169-175 2002/01
  •  Structural Change of Polycrystalline Silicon Films with Different Deposition Temperature JOURNAL OF APPLIED PHYSICS 85 7 3844-3849 1999/04
  •  Structure of defects in silicon oxynitride films JOURNAL OF APPLIED PHYSICS 89 5 1 2001/03
  •  Structure of Polycrystalline Silicon Films Deposited at Low Temperature by Plasma CVD on Substrates Exposed to Different Plasma THIN SOLID FILMS 337 27-31 1999/01
  •  Temperature Effects on the Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition using SiH4/SiF4 Japanese Journal of Applied Physics 38 3A 1303-1309 1999/03
  •  Two-levels of Ni/n-GaAs Schottky barrier heights formed on a wafer by controlling pH of pretreatment chemicals Japanese Journal of Applied Physics 39 Pt1, 10 5788-5793 2000/10
  •  Deposition of SiO2:F:C films with low dielectric constant and with high resistance to annealing Proceedings of Materials Research Society Fall Meeting 1999 (Boston) 606 57-62 2000/01
  •  Effects of deposition temperature and H2 dilution on structural and optical properties of Si films with nanometer-sized crystallites 1st MINIA International Conference for Advanced Trends in Engineering 153-161 1999/03
  •  Effects of Hydrogen dilution on the structural and optical properties of nanocrystalline silicon films 2nd International Conference on Basic Science and Advanced Technology 39 Pt1, 10 5788-5793 2000/11
  •  Luminescence properties of nanocrystalline silicon films 2000 European Material Research Conference (Strasbourg) 2000/06
  •  Optical Properties of Nanocrystalline silicon films with different deposition temperatures Proceedings of Materials Research Society Fall Meeting 1999 (Boston) 581 585-570 2000/01
  •  Quantum chemical study on electronic excited states in silicon clusters passivated by hydrogen and oxygen atoms Proceedings 25th International Conference on Physics of Semiconduntors (Osaka) 1279-1280 2000/09
  •  Structure of polycrystalline silicon films by glow-discharge decomposition using SiH4/H2/SiF4 at low temperature Proceedings of Materials Research Society Fall Meeting 1999 (Boston) 581 199-204 2000/01
  •  Surface states of (100) n-GaAs with adsorbed oxygens and their dependence on chemical treatment Proceedings 25th International Conference on Physics of Semiconduntors (Osaka) 327-328 2000/09
  •  Controlled photoluminescence from silicon nanocrystals in a vertical optical cavity with distributed Bragg reflectors 0 4 1258-1261 2003/06
  •  Structural and electric properties of ultrathin SiOxNy layers with posttreatment in N2 plasma JOURNAL OF APPLIED PHYSICS 96 11  6409-6414 2004/12
  •  Characterization of structure and role of different textures in polycrystalline Si films JOURNAL OF NON-CRYSTALLINE SOLIDS 2005/08
  •  Formation of ultrathin SixNy layers on silicon utilizing PECVD JOURNAL OF NON-CRYSTALLINE SOLIDS 2005/10
  •  Optical and structural properties of polycrystalline 3C-SiC films APPLIED PHYSICS LETTERS 89 18  141904 2006/10
  •  Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition APPLIED SURFACE SCIENCE 253 3  1198-1204 2006/11
  •  Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films SURFACE SCIENCE 601 5  1429-1436 2007/03
  •  Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering A.M. Shamekh, N. Tokuda, T. Inokuma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 50 1 01BF04 2011/01
  •  Effects of high-temperature annealing on electron spin resonance in SiOx films prepared by R. F. sputtering system A.M. Shamekh, N. Tokuda, T. Inokuma JOURNAL OF NON-CRYSTALLINE SOLIDS 357 3 981 2011/02
  •  Roles of SiH4 in growth, structural changes and optical properties of nanocrystalline silicon thin films AIP Conference Proceedings 1370 2011/05
  •  Formation of step-free surfaces on diamond (111) mesas by homoepitaxial lateral growth JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 51 9 090107 2012/09
  •  Morphological, luminescence and structural properties of nanocrystalline silicon thin films MATERIALS RESEARCH BULLETIN 48 3 1027-1033 2013/03
  •  Fabrication of graphene on atomically flat diamond (111) surfaces using nickel as a catalyst S. Kanada, M. Nagai, S. Ito, T. Matsumoto, M. Ogura, D. Takeuchi, S. Yamasaki, T. Inokuma, N. Tokuda Diamond and Related Materials 75 105-109 2017/02
  •  Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel, K. Nakanishi, H. Kuroshima, T. Matsumoto, T. Inokuma, N. Tokuda Diamond and Related Materials 75 105-109 2016
  •  Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics T. Matsumoto, H. Kato, K. Oyama, T. Makino, M.Ogura, D. Takeuchi, T. Inokuma, N. Tokuda, S. Yamasaki Scientific Reports 68 31585 2016
  •  Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films N. Tokuda, M.Ogura, T. Matsumoto, S. Yamasaki, T. Inokuma Physica Status Solidi (A) 213 2051-2055 2016
  •  Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition Norio Tokuda, Masahiko Ogura, Satoshi Yamsaki, and Takao Inokuma Jpn. J. Appl. Phys.  53 04EH04 2014
  •  Density functional studies of surface potentials for hydrogen and oxygen atoms on diamond (111) surfaces Samar Moustafa, Norio Tokuda, and Takao Inokuma Jpn. J. Appl. Phys. 53 02BD01 2014

Conference Presentations

Arts and Fieldwork

Patent

Theme to the desired joint research

○Device Applications of Si nanocrystals

Grant-in-Aid for Scientific Research

○「周期的構造変調層を形成したSiナノ結晶分散薄膜の電気的・光学的性質」(1999-) 
○「周期的構造変調層を形成したSiナノ結晶分散薄膜の電気的・光学的性質」(2000-) 
○「Siナノ結晶分散薄膜を活性媒質として用いたフォトニック結晶の光学的特性」(2001-) 
○「Siナノ結晶分散薄膜を活性媒質として用いたフォトニック結晶の光学的特性」(2002-) 
○「シリコンナノ結晶分散薄膜を用いた微小球光共振器の作製と光学特性解析」(2005-) 
○「シリコンナノ結晶分散薄膜を用いた微小球光共振器の作製と光学特性解析」(2006-) 

Classes (Bachelors)

○Electromagnetic Theory 2 and Exercise(2017)
○Fundamental Physics 1(2017)
○Quantum Mechanics(2017)
○Introduction to Region-studies(2017)
○Computer Literacy(2017)
○Research Project(2017)
○Quantum Mechanics(2016)
○Research Project(2016)
○Research Project(2016)
○Research Project(2016)
○Electromagnetic Theory 2 and Exercise(2016)
○Introduction to Region-studies(2016)
○Fundamental Physics 1(2016)

Classes (Graduate Schools)

○Introduction to Electrical Engineering and Computer Science(2017)
○Thin Film Electronics(2017)
○Introduction to Electrical Engineering and Computer Science(2017)
○Introduction to Electrical Engineering and Computer Science(2017)
○Thin Film Electronics(2017)
○Introduction to Electrical Engineering and Computer Science(2017)
○Thin Film Electronics(2017)
○International Research Internship(2017)
○International Research Internship(2017)
○Fundamentals of Materials Characterization B(2017)
○Research Ethics(2017)
○Thin Film Electronics(2017)
○Fostering the independence of researchers(2017)
○Fostering the independence of researchers(2017)
○Introduction to Electrical Engineering and Computer Science(2016)
○International Research Internship(2016)
○International Research Internship(2016)
○Fundamentals of Materials Characterization B(2016)
○Thin Film Electronics(2016)

International Project

International Students

Lecture themes

Others (Social Activities)

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