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Researcher Information

last modified:2017/05/23

Associate Professor MARUYAMA, Takeo

Mail Laboratory Website

Faculty, Affiliation

Faculty of Electrical and Computer Engineering, Institute of Science and Engineering

College and School Educational Field

Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology
Division of Electrical Engineering and Computer Science, Graduate School of Natural Science and Technology

Laboratory

 TEL:076-234-4886 FAX:076-234-4870

Academic Background

【Academic background(Doctoral/Master's Degree)】
Tokyo Institute of Technology Doctor Department of Physical Electronics 200203 Completed
【Academic background(Bachelor's Degree)】
Tokyo Institute of Technology Department of Electrical Electronic Engineering 199703
【Degree】
Doctor of Engineering

Career

Tokyo Institute of Technology Research Center for Quantum Effect Elect Research Associate(2002/04/01-2004/03/31)
Tokyo Institute of Technology Quantum Nanoelectronics Research Center Research Associate(2004/04/01-2007/03/31)
Tokyo Institute of Technology Quantum Nanoelectronics Research Center Assistant Professor(2007/04/01-2008/03/31)
Kanazawa University(2008/04/01-)

Year & Month of Birth

1972/12

Academic Society

The Institute of electronics, Information and Communication Engineers


The Institute of electronics, Information and Communication Engineers
the Japan Society of Applied Physics
IEEE
The Institute of electronics, Information and Communication Engineers
the Japan Society of Applied Physics
The Institute of electronics, Information and Communication Engineers

Award

○Hiroshi Ando Memorial Young Engineer Award(2008/06/21)

Specialities

Electron device/Electronic equipment

Speciality Keywords

Research Themes

High Speed Photodetector Fabricated by CMOS Compatible Process

Books

Papers

  •  Characterizing Silicon Avalanche Photodiode Fabricated by Standard 0.18µm CMOS Process for High-Speed Operation Z. A. F. M. Napiah, R. Gyobu, T. Hishiki, T. Maruyama, K. Iiyama IEICE TRANSACTIONS on Electronics E99-C 12 1304-1311 2016/12/01
  •  Over 10 GHz Lateral Silicon Photodetector Fabricated on Silicon-on-insulator Substrate by CMOS-compatible Process Gen Li, Takeo Maruyama, Koichi Iiyama JAPANESE JOURNAL OF APPLIED PHYSICS 54 4S 04DG06 2015/03
  •  Reduction of Wavelength Dependence of Coupling Characteristics Using Si Optical Waveguide Curved Directional Coupler Hisayasu Morino, Takeo Maruyama, Koichi Iiyama JOURNAL OF LIGHTWAVE TECHNOLOGY 32 12 2188 2014/07
  •  Low-propagation-loss Ta2O5 Optical Waveguides on Silica Substrate Gen Li, Takeo Maruyama, Koichi Iiyama JAPANESE JOURNAL OF APPLIED PHYSICS 53 4S 04EG12 2014/03
  •  GHz Response of Metamorphic InAlAs Metal-semiconductor-metal Photodetector on GaAs Substrate Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama, Toshikazu Suzuki, JAPANESE JOURNAL OF APPLIED PHYSICS 53 2S 02BC16 2014/02

show all

  •  High-efficiency Optical Coupling to Planar Photodiode using Metal Reflector loaded Waveguide Grating Coupler Gen Li, Takeo Maruyama, Koichi Iiyama OPTICAL AND QUANTUM ELECTRONICS 45 7 657-663 2013/07
  •  GaInAsP/InP quantum wire lasers S. Arai, N. Nishiyama, T. Maruyama and T. Okumura IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 17 5 1381-1389 2011/09
  •  High-resolution FMCW reflectometry using a single-mode vertical-cavity surface-emitting laser IEEE PHOTONICS TECHNOLOGY LETTERS 23 11 703-705 2011/07
  •  Hole-injection-type and electron-injection-type silicon avalanche photodiodes fabricated by standard 0.18 μm CMOS process IEEE PHOTONICS TECHNOLOGY LETTERS 22 12 932-934 2010/06
  •  Mach-Zehnder interferometric optical switch with MEMS phase shifter  Makoto Inamoto, Takeo Maruyama, Koichi Iiyama OPTICAL AND QUANTUM ELECTRONICS 41 8 599-604 2009/06
  •  Polarization anisotropy of spontaneous emission spectra in GaInAsP/InP quantum-wire structures JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REV 47 5 3735-3741 2008/05
  •  Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits T. Okumura, M. Kurokawa, M. Shirao, D. Kondo, H. Ito, N. Nishiyama, T. Maruyama and S. Arai OPTICS EXPRESS 17 15 12564-12570 2009/07
  •  GaInAsP/InP quantum wire lasers S. Arai and T. Maruyama IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 15 3 731-742 2009/05
  •  Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60 K. Inoue, D. Plumwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama and S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 48 3 030208(3pages) 2009/03
  •  Injection-type GaInAsP-InP-Si distributed-feedback laser directly bonded on silicon-on-insulator substrate T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama and S. Arai IEEE PHOTONICS TECHNOLOGY LETTERS 21 5 283-285 2009/03
  •  GaInAsP/InP membrane BH-DFB laser with air-bridge structure H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama and S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 46 47 L1158-L1160 2007/12
  •  Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback (DFB) Lasers Bonded on Silicon-on-Insulator (SOI) Substrate with Rib-Waveguide Structure T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 46 48 L1206-L1208 2007/12
  •  Micro-photoluminescence characterizations of GaInAsP/InP single quantum wires fabricated by dry etching and regrowth H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama and S. Arai JOURNAL OF APPLIED PHYSICS 102 9 093509(5pages) 2007/11
  •  85 oC continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding Layer S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, T. Maruyama, N. Nishiyama and S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 46 47 L1158-L1160 2007/11
  •  Bragg wavelength detuning in GaInAsP/InP DFB lasers with wirelike active regions D. Plumwongrot, Y. Nishimoto, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama and S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 46 45 L1090-L1092 2007/11
  •  Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama and S. Arai IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 13 5  1135-1141 2007/09
  •  Fabrication and characterization of amorphous polyethylene terephthalate optical waveguides Koichi Iiyama, Terumasa Ishida, Y. Ono, Takeo Maruyama, T. Yamagishi, IEEE PHOTONICS TECHNOLOGY LETTERS 23 5 275-277 2011/05
  •  GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate T. Maruyama, T. Okumura, S. Sakamoto, K. Miura,Y. Nishimoto and S. Arai OPTICS EXPRESS 16 14 8184-8188 2006/09
  •  High T0 operation of 1590 nm GaInAsP/InP quantum-wire distributed feedback lasers by Bragg wavelength detuning Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 46 17 L411-L413 2007/04
  •  Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate T. Maruyama, T. Okumura and S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 45 11 8717-8718 2006/11
  •  Low-threshold current density GaInAsP/InP quantum-wire distributed feedback lasers fabricated by low-damage processes Y. Nishimoto, K. Miura, H. Yagi, D. Plumwongrot, K. Ohira, T. Maruyama, S. Arai JAPANESE JOURNAL OF APPLIED PHYSICS 46 2 L34-L36 2007/02
  •  Reduced temperature dependence of lasing wavelength in membrane BH-DFB lasers with polymer cladding layers S. Sakamoto, H. Kawashima, H. Naitoh, S. Tamura, T. Maruyama and S. Arai IEEE PHOTONICS TECHNOLOGY LETTERS 19 5 291-293 2007/03

Conference Presentations

  • Sub-um Electrode Spacing SOI-PIN Photodiode Fabricated by CMOS Compatible Process(conference:21st OptoElectronics and Communications Conference (OECC 2016))(2016/07/06)

Arts and Fieldwork

Patent

Theme to the desired joint research

○Optoelectronics

Grant-in-Aid for Scientific Research

○「CMOSプロセスを用いた超高速シリコンモノリシック光レシーバの開発」(2015-2017) 
○「超高速シリコン光検出器とLSIを集積させたモノリシック光レシーバの開発」
○「アモルファス/結晶ハイブリッド型シリコン光集積回路」(2012-2013)
○「アモルファス/結晶ハイブリッド型シリコン光集積回路」(2012-2013) 
○「Si系LSI内広帯域配線層の為のInP系メンブレン光・電子デバイス」(2007-2011) 
○「量子ナノ構造を用いる低消費電力・高機能単一波長半導体レーザの研究」(2005-) 
○「SOI導波路上単一モード半導体薄膜レーザに関する研究」(2007-) 
○「薄膜半導体光導波路を有する低次元量子井戸レーザに関する研究」(2005-) 

Classes (Bachelors)

○Research Project(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Electrical and Electronic Engineering Laboratory I(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Freshman Seminar I(2017)
○Freshman Seminar I(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Presentation and Debate (Freshman Seminar II)(2017)
○Mechanics(2017)
○Electromagnetic Theory 1 and Exercise(2017)
○Electromagnetic Theory 1 and Exercise(2016)
○Introduction to Electronics, Computer Engineering and Bioinformatics A(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Freshman Seminar I(2016)
○Electrical and Electronic Engineering Laboratory I(2016)
○Mechanics(2016)
○Presentation and Debate (Freshman Seminar II)(2016)
○Freshman Seminar I(2016)

Classes (Graduate Schools)

○Theory of Optical Integrated Circuits(2017)
○Theory of Optical Integrated Circuits(2017)
○Theory of Optical Integrated Circuits(2017)
○Theory of Optical Integrated Circuits(2017)
○Fostering the independence of researchers(2017)
○Lightwave Engineering B(2017)
○Fostering the independence of researchers(2017)
○Theory of Optical Integrated Circuits(2016)
○Lightwave Engineering B(2016)

International Project

International Students

Lecture themes

○Optical Communication
○Optical device
○Semiconductor

Others (Social Activities)

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