last modified：2025/03/15
Professor SUZUKI Masakatsu
Faculty, Affiliation
Institute of Liberal Arts and Science Faculty of Global Standard Education
College and School Educational Field
Laboratory
General Education Hall 1, Room 310
Academic Background
【Academic background(Doctoral/Master's Degree)】
Osaka University Master Graduate School of Engineering Science Department of Physics 199203 Completed
【Academic background(Bachelor's Degree)】
Osaka University Department of Material Physics 199003
【Degree】
Doctor of Science
Master of Engineering
Career
Panasonic Corporation (Formerly, Matsushita Electric Industrial Co., Ltd.) Central Research Laboratory Researcher(1992/04-2000/03)
Panasonic Corporation (Formerly, Matsushita Electric Industrial Co., Ltd.) Semiconductor Company Staff Engineer(2000/04-2012/03)
Waseda University School of Science and Engineering Lecturer (part-time)(2006/04-2010/03)
Panasonic Corporation Device Company, Semiconductor Group Senior Engineer(2012/04-2014/03)
Tower Partners Semiconductor Co., Ltd. (Formerly, TowerJazz Panasonic Semiconductor Co.,Ltd.) Process Technology Center Senior Engineer, Section Manager(2014/04-2024/02)
Kanazawa University Institute of Liberal Arts and Science Professor(2024/03-)
Year & Month of Birth
1968/03
Academic Society
The Physical Society of Japan
The Japan Society of Applied Physics
Award
○JJAP Young Scientist Award(1997/10)
Specialities
Electronic materials/Electric materials、Electron device/Electronic equipment、Computational science
Speciality Keywords
Semiconductor laser, Image sensor, Li ion battery, Solar cells, First principles caluculation, Magnetic material
Research Themes
Career development for doctoral students and international students
Books
- S. Nakamura and S. F. Chichibu (Edit.); T. Uenoyama and M. Suzuki (Chapter 2) Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes Taylor & Francis (CRC Press) 2000/03/09
- Stephen J. Pearton (Edit.), T. Uenoyama and M. Suzuki (Chapter 6) GaN and Related Materials II (Optoelectronic Properties of Semiconductors and Superlattices) Gordon and Breach (CRC Press) 2000/01
- J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (Edit.), M. Suzuki and T. Uenoyama (Chapter A6) Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (EMIS DATAREVIEWS SERIES, No23) The Institution of Electrical Engineers (INSPEC) 1999/01
- Bernard Gil (Edit.), M. Suzuki and T. Uenoyama (Chapter 8) Group III Nitride Semiconductor Compounds: Physics and Applications Oxford University Press (Clarendon Press) 1998/07/16
Papers
- Low temperature lag-induced FPN of dual transfer global shutter pixels under low illumination conditions X. Ge, A. Lahav, M. Tsutsui, M. Suzuki, T. Imoriya Proceedings of 2023 International Image Sensors Workshop Online Library R2.4 2023/05
- Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics W. Snoeys, M. Suzuki and 120 other authors Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, PoS (Pixel2022) 420 P083 2023/03/13
- Pixel pitch hybrid bonding and three layer stacking technology for BSI image sensor K. Tanida, S. Suzuki, T. Seo, Y. Morinaga, H. Korogi, M. Tetani, R. Eto, T. Yamashita, Y. Kato, N. Sato, T. Shimizu, T. Hanawa, H. Kubo, K. Ueda, F. Ito, Y. Noguchi, M. Nakamura, R. Mizukoshi, M. Takeuchi, M. Suzuki, N. Niisoe, I. Miyanaga, A. Ikeda, S. Matsumoto Proceedings of 2022 IEEE International Interconnect Technology Conference (IITC) 5-7 2022/06/27
- Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel Toshifumi Yokoyama, Masafumi Tsutsui, Masakatsu Suzuki, Yoshiaki Nishi, Ikuo Mizuno, Assaf Lahav Sensors 18 2 349-360 2018/01/25
- Development of low noise memory node in a 2.8μm global shutter pixel with dual transfer M. Tsutsui, T. Hirata, K. Tachikawa, I. Mizuno, M. Suzuki, D. Veinger, A. Birman, A. Lahav Proceedings of 2017 International Image Sensors Workshop 28-31 2017/05
- Design of double micro lens structure for 2.8um global shutter pixel T. Yokoyama, M. Suzuki, Y. Nishi, I. Mizuno, A. Lahav Proceedings of 2017 International Image Sensors Workshop 398-401 2017/05
- Cross talk, quantum efficiency and parasitic light sensitivity comparison for different near infra-red enhanced sub 3um global shutter pixel architectures A. Lahav, D. Veinger, A. Birman, M. Suzuki, T. Hirata, K. Tachikawa, M. Tsutsui, T. Yokoyama, Y. Nishi, I. Mizuno Proceedings of 2017 International Image Sensors Workshop 390-393 2017/05
- A 1.4um front-side illuminated image sensor with novel light guiding structure consisting of stacked lightpipes Hisashi Watanabe, Jun Hirai, Motonari Katsuno, Keishi Tachikawa, Sho Tsuji, Masao Kataoka, Saori Kawagishi, Hiroko Kubo, Hisashi Yano, Shigeru Suzuki, Gen Okazaki, Kouichi Yamamoto, Hiroshi Fujinaka, Takashi Fujioka, Masakatsu Suzuki Proceedings of 2011 IEEE International Electron Devices Meeting (IEDM) 197-200 2011/12
- Electronic Band Structure of Li2CuO2 and Application to Battery Electrode Norikazu Tanaka, Masakatsu Suzuki, Kazuko Motizuki Japanese Journal of Applied Physics 39 S1 248-250 2000/01
- Electronic and magnetic properties of Li2CuO2 Norikazu Tanaka, Masakatsu Suzuki, Kazuko Motizuki Physica B: Condensed Matter 284-288 1388-1389 2000/07
- Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content A. Tsujimura, A. Ishibashi, Y. Hasegawa, S. Kamiyama, I. Kidoguchi, N. Otsuka, R. Miyanaga, G. Sugahara, M. Suzuki, M. Kume, K. Harafuji, Y. Ban Physica status solidi (a) 176 1 53-57 1999/11/22
- Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content A. Tsujimura, Y. Hasegawa, A. Ishibashi, S. Kamiyama, I. Kidoguchi, R. Miyanaga, M. Suzuki, M. Kume, K. Harafuji, Y. Ban Electronics Letters 35 12 998-998 1999/06/10
- Electronic Structure and Magnetic Properties of Li2CuO2 Norikazu Tanaka, Masakatsu Suzuki, Kazuko Motizuki Journal of the Physical Society of Japan 68 5 1684-1692 1999/05/15
- Theoretical optical gain in InGaN quantum wells Takeshi Uenoyama, Masakazu Suzuki Materials Science and Engineering: B 59 1-3 376-381 1999/05/06
- Electronic band structure of Li2CuO2 N. Tanaka, M. Suzuki, K. Motizuki Journal of Magnetism and Magnetic Materials 196-197 667-668 1999/05/01
- Effect of crystal symmetry on electronic structures of CuInSe2 and CuIn3Se5 M. Suzuki, T. Uenoyama, T. Wada, T. Hanada, Y. Nakamura Inst. Phys. Conf. Ser. (Proc. 11th Int. Conf. on Ternary and Multinary Compounds (ICTMC11)) 152 197-200 1998
- Effect of crystal symmetry, strain and spin–orbit coupling on electronic and optical properties of III-nitrides M Suzuki, T Uenoyama Journal of Crystal Growth 189-190 625-629 1998/06/15
- Effect of crystal symmetry on electronic structures of CuInSe2 and related compounds Masakatsu Suzuki, Takeshi Uenoyama, Takahiro Wada, Takeshi Hanada, Yoshio Nakamura Japanese Journal of Applied Physics 36 9A L1139-L 1997/09/15
- Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells Takeshi Uenoyama, Masakatsu Suzuki Physics and Simulation of Optoelectronic Devices V (Proc. Soc. Photo-Opt. Instr. Eng) 2994 94-101 1997/06/06
- Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum Well Structures M. Suzuki, T. Uenoyama Mat. Res. Soc. Proc. 468 251-262 1997/03
- First principles calculation of effective mass parameters of GaN Masakatsu Suzuki,Takeshi Uenoyama Solid-State Electronics 41 2 271-274 1997/02
- Strain effect on electronic and optical properties of GaN/AlGaN quantum well lasers Masakatsu Suzuki, Takeshi Uenoyama Journal of Applied Physics 80 12 6868-6874 1996/12/15
- Optical gain and crystal symmetry in III–V nitride lasers Masakatsu Suzuki, Takeshi Uenoyama Applied Physics Letters 69 22 3378-3380 1996/11/25
- Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane Masakatsu Suzuki, Takeshi Uenoyama Japanese Journal of Applied Physics 35 8A L953-L956 1996/08/01
- Theoretical estimation of LD performance in zincblende and wurtzite III-V nitrides T. Uenoyama, M. Suzuki Proc. Int. Symp. on Blue Laser and Light Emitting Diodes (ISBLLED) 271-276 1996/03
- Strain effect on GaN/AlGaN quantum well laser diodes M. Suzuki, T. Uenoyama Proc. Int. Symp. on Blue Laser and Light Emitting Diodes (ISBLLED) 368-371 1996/03
- Strain Effects on Optical Gain Properties of GaN/AlGaN Quantum Well Lasers M. Suzuki, T. Uenoyama Mat. Res. Soc. Proc. 421 171-182 1996/03
- Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers Masakatsu Suzuki, Takeshi Uenoyama Japanese Journal of Applied Physics 35 2S 1420-1423 1996/02/01
- Theoretical Study of Momentum Matrix Elements of GaN Masakatsu Suzuki, Takeshi Uenoyama Japanese Journal of Applied Physics 35 2R 543-545 1996/02/01
- Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations T. Uenoyama, M. Suzuki Mat. Res. Soc. Proc. 395 171-182 1995/12
- Optical properties of wurtzite GaN/AlGaN quantum wells Inst. Phys. Conf. Ser. 142 (1996) 915-918; M. Suzuki, T. Uenoyama, S. Kamiyama Inst. Phys. Conf. Ser. (Proc. 6th Int. Conf. on Silicon Carbide and Related Materials (ICSCRM95)) 142 915-918 1996
- First-Principles Calculation of Effective Mass Parameters of Gallium Nitride Masakatsu Suzuki, Takeshi Uenoyama Japanese Journal of Applied Physics 34 7R 3442-3446 1995/07/01
- First-principles calculations of effective-mass parameters of AlN and GaN Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase Physical Review B 52 11 8132-8139 1995/09/15
- Valence subband structures of wurtzite GaN/AlGaN quantum wells Takeshi Uenoyama, Masakatsu Suzuki Applied Physics Letters 67 17 2527-2529 1995/10/23
- Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers Takeshi UENOYAMA, Masakatsu SUZUKI, Satoshi KAMIYAMA Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials 689-691 1995/08
- Optical gain analysis of wurtzite InGaN quantum-well lasers using k・p theory S. Kamiyama, M. Suzuki, T. Uenoyama, Y. Ban Proc. Topical Workshop on III-V Nitrides 205-208 1997/01
- Compensation Mechanism of Free Hole Carriers in N-Doped ZnSe Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials 74-76 1993/09
- Interaction between N2 and stabilized ZnSe surface T. Uenoyama, T. Nakao, M. Suzuki Journal of Crystal Growth 138 1-4 301-304 1994/04
- Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZnSe - Taketoshi Nakao, Masakatsu Suzuki, Takeshi Uenoyama, Yusuke Funayose Materials Science Forum 196-201 293-296 1995/11
- Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser Satoshi Kamiyama, Kiyoshi Ohnaka, Masakatsu Suzuki, Takeshi Uenoyama Japanese Journal of Applied Physics 34 7A L821 1995/07/01
- Electronic band structure in the ferrimagnetic state of Mn2Sb M Suzuki, M Shirai, K Motizuki Journal of Physics: Condensed Matter 4 1 L33-L36 1992/01/06
- Theoretical Study of Magnetic Ordering of Cu2Sb-type Intermetallic Compounds Kazuko Motizuki, Masakatsu Suzuki, Masafumi Shirai Japanese Journal of Applied Physics 32 S3 221-226 1993/01/01
Conference Presentations
Others
- A 1.4um front-side illuminated image sensor with novel light guiding structure consisting of stacked lightpipes: Smart FSI Watanabe Hisashi, Hirai Jun, Katsuno Motonari, Tachikawa Keishi, Kataoka Masao, Kawagishi Saori, Kubo Hiroko, Yano Hisashi, Suzuki Shigeru, Okazaki Gen, Yamamoto Kouichi, Fujinaka Hiroshi, Fujioka Takashi, Suzuki Masakatsu ITE Technical Report 36 18 37-40 2012/03
- Electronic band structure of Li2CuO2 and application to battery electrode N. Tanaka, M. Suzuki, K. Motizuki Bulletin of Okayama University of Science. A, Natural Sciences 35 51-54 2000/03/31
- Analysis of optical gain of GaN-based lasers with first-principles calculations UENOYAMA Takeshi, SUZUKI Masakatsu OYOBUTURI 66 9 956-959 1997/09
- Optical Properties of GaN/AlGaN Quantum Wells T. Uenoyama, M. Suzuki IEICE technical report. Optoelectronics 96 445 1-5 1997/01/17
- Mechanism of adsorption/dissociation reactions of excited nitrogen molecules on the surface of ZnSe-based semiconductors and p-type doping T. Uenoyama, T. Nakao, M. Suzuki The Japan Society of Applied Physics, Solid State Physics and Applications Division, Technical Report 451 31-36 1993
Arts and Fieldwork
Patent
Theme to the desired joint research
Grant-in-Aid for Scientific Research
Competitive research funding,Contribution
Collaborative research,Consignment study
Classes (Bachelors)
○Lecture on Life in Campus and Society(2024)
○Corporate Culture and Organization Theories A(2024)
○Corporate Culture and Organization Theories B(2024)